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Infineon ISP Type P-Channel MOSFET, 3-Pin SOT-223, 3.9 A, 100 V, Enhancement Mode ISP16DP10LMXTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.35mm |
| Length | 6.1mm |
| Model | ISP16DP10LMXTSA1 |
| Width | 1.2mm |
| Mount Type | Surface |
| Series | ISP |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.9A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.38Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 11.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a SOT-223 package suitable for surface mounting.
- Maximum drain-source resistance is 1.38 ohms for efficient conduction.
- Supports maximum gate-source voltage of 20 V for stable switching.
- Capable of dissipating up to 5 W power with high temperature tolerance.
- Operates efficiently from -55°C up to +175°C temperature range.
- Typical gate charge of 11.6 nC ensures fast switching performance.
- Designed for battery management, load switching, and reverse polarity protection applications.
- Industry standard footprint enables easy integration into automated manufacturing.
Product Description
Infineon ISP16DP10LMXTSA1 is a P-Channel enhancement mode MOSFET packaged in a compact 3-pin SOT-223 surface mount package. It supports a continuous drain current of 3.9 A and a maximum drain-source voltage of 100 V, making it suitable for a broad range of industrial and electronic applications including battery management, load switching, and reverse polarity protection.
This MOSFET offers a robust design with a maximum power dissipation of 5 W and is capable of operating across a wide temperature range from -55°C to 175°C, ensuring reliability in harsh industrial environments. The device features low drain-source resistance (1.38 Ω), optimized gate charge (11.6 nC), and can handle a gate-source voltage up to 20 V, facilitating efficient switching and low power loss.
The SOT-223 package provides an industry standard footprint for ease of mounting and automated manufacturing processes. This component excels in applications requiring high switching frequencies, avalanche ruggedness, and a secure, reliable performance.
Compact surface mount SOT-223 package with 3 pins. Enhanced efficiency due to low on-resistance and optimized gate charge. Designed for high and low frequency switching applications. Wide operating temperature range ensures durability and reliability.
Suitable for battery management and industrial automation systems. High power dissipation capability for demanding applications. Industry standard footprint for compatibility with automated assembly. Robust and reliable performance for long service life.
This MOSFET component is ideal for professional industrial, electronic manufacturing, and design applications requiring a reliable power switching device. It aligns with current semiconductor technology trends targeting enhanced efficiency and robust device protection.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.9 A.
It can handle a maximum drain-source voltage of 100 V.
This MOSFET is capable of dissipating up to 5 W of power.
It operates efficiently within a temperature range of -55°C to +175°C.
The typical gate charge is 11.6 nC, which ensures fast switching performance.
The maximum gate-source voltage supported is 20 V.
The maximum drain-source resistance is 1.38 ohms, allowing for efficient conduction.
It is packaged in a compact 3-pin SOT-223 surface mount package.
The dimensions are 6.1 mm in length, 1.2 mm in width, and 5.35 mm in height.
It is designed for battery management, load switching, and reverse polarity protection applications.
This model supports surface mounting, making it suitable for automated manufacturing.
The channel type is P-Channel, which is suitable for various power switching applications.
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