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Infineon IPD Type P-Channel MOSFET, Enhancement Mode, 13.9 A, 100 V, 3-Pin TO-252 IPD18DP10LMATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD18DP10LMATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 13.9A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 178mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | -42nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Designed with a TO-252 package for surface mount applications.
- Maximum drain-source resistance (Rds) of 178 milliohms ensures efficient conduction.
- Typical gate charge of -42 nC at Vgs optimizes switching performance.
- Supports maximum gate-source voltage of 20 V with forward voltage of -1.2 V.
- Can dissipate a maximum power of 83 W for reliable operation.
- Operates efficiently over a temperature range from -55°C to 175°C.
- Manufactured with enhancement mode channel suitable for battery management and load switching.
- Pin count of 3 accommodates standard circuit configurations.
Product Description
Infineon IPD18DP10LMATMA1 is a P-Channel MOSFET designed using OptiMOS™ technology, featuring enhancement mode operation with a maximum continuous drain current of 13.9 A and a maximum drain-source voltage rating of 100 V.
This device comes in a compact TO-252 package, suitable for surface mount applications, offering a pin count of 3 for easy PCB integration. The MOSFET exhibits a low maximum drain-source resistance of 178 milliohms, contributing to high efficiency with minimal power loss during conduction.
Featuring a typical gate charge of -42 nC at the specified gate-source voltage, this device ensures fast switching speeds, making it ideal for battery management, load switch, and reverse polarity protection roles.
It supports a maximum gate-source voltage of 20 V and has a forward voltage drop of -1.2 V, enabling effective electrical performance in demanding conditions. With a maximum power dissipation rating of 83 W and extended operating temperature range from -55°C to 175°C, this MOSFET withstands harsh industrial environments.
The enhancement mode channel design reduces design complexity in medium and low power applications, facilitating interfacing with microcontroller units (MCUs) easily. Common use cases include battery management systems, industrial automation, and other electronic applications requiring efficient and reliable switching.
Designed with a TO-252 package for surface mount applications. Maximum drain-source resistance (Rds) of 178 milliohms ensures efficient conduction. Typical gate charge of -42 nC optimizes switching performance. Operates efficiently across a wide temperature range from -55°C to 175°C.
Capable of handling 13.9 A continuous drain current. Ideal for battery management and load switching applications. Fast switching and avalanche ruggedness for high-quality performance. Compact and surface mountable 3-pin package.
Reduction in design complexity with P-channel technology. Suitable for medium and low power electronic designs. Explore our extensive range of MOSFETs at EnvMart for complementary products, components, and accessories.
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Frequently Asked Questions
The maximum continuous drain current of this model is 13.9 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
It comes in a TO-252 package designed for surface mount applications.
The maximum power dissipation rating is 83 W.
The typical gate charge is -42 nC at the specified gate-source voltage.
It supports a maximum gate-source voltage of 20 V.
This MOSFET operates efficiently over a temperature range from -55°C to 175°C.
The maximum drain-source resistance (Rds) is 178 milliohms.
It has a pin count of 3, accommodating standard circuit configurations.
This model uses a P-Channel type for its operation.
It is suitable for battery management, load switching, and reverse polarity protection applications.
It is designed using OptiMOS™ technology, which features enhancement mode operation.
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