Infineon IPD Type P-Channel MOSFET 13.9 A Continuous Drain Current 100 V Drain Source Voltage TO-252 Package IPD18DP10LMATMA1

Infineon IPD18DP10LMATMA1 P-Channel MOSFET is engineered for robust performance in battery management, load switch, and reverse polarity protection applications within industrial and electronic systems. This discrete semiconductor device, housed in a TO-252 surface mount package with three pins, supports a maximum continuous drain current of 13.9 amperes and a maximum drain source voltage of 100 volts. Its enhancement channel mode ensures fast switching and efficient control, ideal for medium to low power electronics.

The MOSFET features a maximum power dissipation rating of 83 watts, enabling it to handle significant power loads reliably. Its low drain-source resistance (RDS(on)) of 178 milliohms at standard levels enhances circuit efficiency by reducing conduction losses. The typical gate charge of -42 nanocoulombs allows quick switching times, and the device can sustain a maximum gate-source voltage of 20 volts, ensuring robust operation under various electrical conditions.

With operating temperature ranging from -55°C to 175°C, it meets the demands of industrial environments with high reliability. The compact TO-252 package measures 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height, facilitating easy integration into densely populated circuit boards.

Applications for this MOSFET include battery management systems, industrial automation devices, and other electronics requiring efficient power switching with reduced design complexity. Its surface-mount design supports modern manufacturing techniques, and the device's avalanche ruggedness contributes to long-term durability in demanding conditions.

Designed for battery management and load switch applications. Features a maximum power dissipation of 83 watts. Operates efficiently at temperatures from -55°C to 175°C. Offers low RDS(on) resistance of 178 milliohms to improve efficiency.

Utilizes enhancement channel mode for fast switching performance. Includes a typical gate charge of -42 nC at gate-source voltage. Supports a maximum gate-source voltage of 20 volts. Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height.

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