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Infineon IPD Type P-Channel MOSFET 22 A 100 V Enhancement 3-Pin TO-252 IPD11DP10NMATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.41mm
Length 6.73mm
Model IPD11DP10NMATMA1
Width 6.22mm
Mount Type Surface
Series IPD
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 22A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 111mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs -59nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.2V

Key Features

  • Supports a maximum continuous drain current of 22 amperes for robust power handling.
  • Designed as an enhancement mode device with low typical gate charge for efficient switching.
  • Packaged in a 3-pin TO-252 surface mount package suitable for compact electronic assemblies.
  • Capable of withstanding up to 125 watts maximum power dissipation for demanding industrial conditions.
  • Operates reliably across a temperature range from -55°C to 175°C for extended durability.
  • Maximum drain-source resistance is low at 111 milliohms improving conduction efficiency.
  • Supports a maximum gate-source voltage of 20 volts facilitating safe gate drive limits.
  • Measures 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height for space-efficient designs.

Product Description

Infineon IPD11DP10NMATMA1 is a P-Channel MOSFET tailored for power electronics requiring high efficiency and reliability. It is an enhancement mode silicon device enclosed in a TO-252 package with three pins, optimized for surface mounting.

The device supports continuous drain currents up to 22 amperes and withstands drain-source voltages up to 100 volts, making it suitable for moderate power applications in industrial and battery management systems.

Low typical gate charge and a maximum drain-source resistance of 111 milliohms contribute to reduced switching losses and improved conduction performance. It can dissipate a maximum power of 125 watts while operating in wide temperature environments ranging from -55°C to 175°C, ensuring durability under harsh environmental conditions.

Physical dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height allow compact PCB layouts. The component is widely adopted in industrial automation, load switching, and reverse polarity protection applications owing to its ruggedness and reliable switching behavior.

The absence of specific automotive standards certification indicates a primary focus on commercial and industrial electronics rather than automotive-grade requirements. Supports a maximum continuous drain current of 22 amperes for robust power handling.

Designed as an enhancement mode device with low typical gate charge for efficient switching. Packaged in a 3-pin TO-252 surface mount package suitable for compact electronic assemblies. Capable of withstanding up to 125 watts maximum power dissipation for demanding industrial conditions.

Operates reliably across a temperature range from -55°C to 175°C for extended durability. Maximum drain-source resistance is low at 111 milliohms improving conduction efficiency. Supports a maximum gate-source voltage of 20 volts facilitating safe gate drive limits.

Measures 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height for space-efficient designs. Ideal for battery management, load switching, and reverse polarity protection in industrial automation. Lacks automotive-specific certifications but suited for high-quality consumer and industrial electronics.

This Infineon MOSFET benefits engineers working in power conversion, energy management systems, and industrial electronic controls by providing a reliable and efficient switching component.

Explore more high-quality semiconductor products in the MOSFET category at EnvMart for your industrial and commercial electronics projects.

Infineon IPD Type P-Channel MOSFET 22 A 100 V Enhancement 3-Pin TO-252 IPD11DP10NMATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 22 amperes, allowing for robust power handling in various applications.

It can withstand a maximum drain-source voltage of 100 volts, making it suitable for moderate power applications.

This MOSFET is packaged in a 3-pin TO-252 surface mount package, suitable for compact electronic assemblies.

It operates reliably across a temperature range from -55°C to 175°C, ensuring durability under harsh conditions.

This unit is capable of withstanding a maximum power dissipation of 125 watts, suitable for demanding industrial conditions.

The maximum gate-source voltage supported is 20 volts, facilitating safe gate drive limits.

The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height, allowing for space-efficient designs.

The maximum drain-source resistance is low at 111 milliohms, which improves conduction efficiency.

This model features a P-Channel type, designed for enhancement mode operation.

It is widely adopted in industrial automation, load switching, and reverse polarity protection applications due to its ruggedness and reliable switching behavior.

The typical gate charge at the specified gate-source voltage is -59 nC, contributing to efficient switching.

The country of origin for this MOSFET is India, indicating its manufacturing location.

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