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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD11DP10NMATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 111mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | -59nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Infineon IPD11DP10NMATMA1 is a P-Channel MOSFET tailored for power electronics requiring high efficiency and reliability. It is an enhancement mode silicon device enclosed in a TO-252 package with three pins, optimized for surface mounting.
The device supports continuous drain currents up to 22 amperes and withstands drain-source voltages up to 100 volts, making it suitable for moderate power applications in industrial and battery management systems.
Low typical gate charge and a maximum drain-source resistance of 111 milliohms contribute to reduced switching losses and improved conduction performance. It can dissipate a maximum power of 125 watts while operating in wide temperature environments ranging from -55°C to 175°C, ensuring durability under harsh environmental conditions.
Physical dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height allow compact PCB layouts. The component is widely adopted in industrial automation, load switching, and reverse polarity protection applications owing to its ruggedness and reliable switching behavior.
The absence of specific automotive standards certification indicates a primary focus on commercial and industrial electronics rather than automotive-grade requirements. Supports a maximum continuous drain current of 22 amperes for robust power handling.
Designed as an enhancement mode device with low typical gate charge for efficient switching. Packaged in a 3-pin TO-252 surface mount package suitable for compact electronic assemblies. Capable of withstanding up to 125 watts maximum power dissipation for demanding industrial conditions.
Operates reliably across a temperature range from -55°C to 175°C for extended durability. Maximum drain-source resistance is low at 111 milliohms improving conduction efficiency. Supports a maximum gate-source voltage of 20 volts facilitating safe gate drive limits.
Measures 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height for space-efficient designs. Ideal for battery management, load switching, and reverse polarity protection in industrial automation. Lacks automotive-specific certifications but suited for high-quality consumer and industrial electronics.
This Infineon MOSFET benefits engineers working in power conversion, energy management systems, and industrial electronic controls by providing a reliable and efficient switching component.
Explore more high-quality semiconductor products in the MOSFET category at EnvMart for your industrial and commercial electronics projects.
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