Infineon iPB Type P-Channel MOSFET, 62 A Maximum Continuous Drain Current, 100 V Maximum Drain Source IPB330P10NMATMA1

Infineon IPB330P10NMATMA1 is a P-Channel MOSFET within the OptiMOS™ series, designed to provide excellent performance in power management solutions. With a maximum continuous drain current of 62 A and a maximum drain-source voltage of 100 V, it supports efficient switching in industrial and battery management systems. The device uses a D²PAK (TO-263) surface mount package which offers a robust footprint widely accepted in the industry.

This P-Channel MOSFET enables simplified design by reducing complexity in medium and low power applications. Its fast switching speed and avalanche ruggedness make it ideal for environments that demand high reliability, such as industrial automation and battery-powered systems with reverse polarity protection.

The wide RDS(on) range allows improved efficiency especially at low load conditions, reducing power loss and heat generation.

The TO-263 package ensures mechanical durability and standardization for automated production line insertion, which helps enhance manufacturing efficiency. It is not designed for automotive standard compliance but fits a broad scope of power management needs in electronics and industrial automation domains.

Designed for battery management and load switching applications. Fast switching capability with avalanche ruggedness. Wide RDS(on) range for efficiency at low loads. Surface mount package TO-263 for industrial standard footprint.

Robust, reliable performance for demanding environments. Simple interface to microcontrollers enhances design flexibility. Suitable for reverse polarity protection. Ideal for medium and low power switching needs.