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STMicroelectronics Power MOSFET N-channel 22 A 650 V 170 W Through Hole 3-Pin I2PAK STI28N60M2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STI28N60M2 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STI28 |
| Maximum Operating Temperature | 150°C |
| Package Type | I2PAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Developed with MDmesh™ M2 technology offering low on-resistance and optimized switching.
- Suitable for high efficiency converters and resonant power supplies.
- Features extremely low gate charge of 36 nC for improved efficiency.
- 3-pin I2PAK package designed for through-hole mounting.
- Maximum power dissipation of 170 W with operating temperature range from -55°C to 150°C.
- Forward voltage of 1.6 V and maximum drain-source resistance of 150 mΩ.
- Zener protected for robustness and 100% avalanche tested for reliability.
Product Description
STMicroelectronics STI28N60M2 is a power N-channel MOSFET electronic component designed for high-performance power conversion applications. Featuring a maximum continuous drain current of 22 A and maximum drain-source voltage of 650 V, this device supports demanding industrial and electronic projects.
Built using MDmesh™ M2 technology, the STI28N60M2 exhibits extremely low gate charge and optimized capacitance profiles, making it highly efficient for use in resonant power supplies such as LLC converters and other high-frequency switching circuits.
The device comes in a 3-pin I2PAK package for reliable through-hole mounting. With a maximum power dissipation of 170 W and operating temperature range from -55°C to 150°C, it suits industrial, power supply, and electronic manufacturing applications requiring robust and efficient power MOSFET solutions.
Additional features include a maximum gate-source voltage of 25 V, forward voltage of 1.6 V, and a low on-resistance of 150 mΩ, ensuring low losses and heat generation. It is zener protected and 100% avalanche tested to guarantee safe operation under high-stress conditions.
Developed with MDmesh™ M2 technology for low on-resistance and optimal switching. Extremely low gate charge of 36 nC for increased efficiency. 3-pin I2PAK package with through-hole mount type. Maximum continuous drain current of 22 A and drain-source voltage of 650 V.
Operating temperature range from -55°C to 150°C. Maximum power dissipation of 170 W and forward voltage of 1.6 V. Optimized for industrial, power supply, and electronics manufacturing applications. This power MOSFET is suited for applications in industrial power management, electronics manufacturing, converter circuits, and other high-efficiency electronic systems.
Browse EnvMart categories for semiconductor and Power MOSFET solutions or explore STMicroelectronics products for trusted electronic components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 22 A.
The maximum drain-source voltage rating is 650 V.
It operates within a temperature range of -55°C to 150°C.
This model comes in a 3-pin I2PAK package designed for through-hole mounting.
The maximum power dissipation is 170 W.
The typical gate charge is 36 nC at a gate-source voltage of Vgs.
The forward voltage is 1.6 V.
The maximum gate-source voltage is 25 V.
The maximum drain-source resistance is 150 mΩ.
It is developed with MDmesh™ M2 technology, which offers low on-resistance and optimized switching.
This power MOSFET is suited for high-efficiency converters, resonant power supplies, and other industrial power management applications.
The dimensions of this model are 10.4 mm in length, 4.6 mm in width, and 9.3 mm in height.
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