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Infineon HEXFET N-Channel MOSFET 5.3 A 30 V Enhancement Mode 3-Pin SOT-23 IRLML0030TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML0030TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 27mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 2.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Operates with a maximum continuous drain current of 5.3 A allowing moderate load handling.
- Designed with a 30 V maximum drain-source voltage suitable for low-voltage power management.
- Features a 3-pin SOT-23 package for surface mount assembly on compact electronic boards.
- Low drain-source resistance of 27 mΩ ensures efficient conduction and reduced power losses.
- Functions in enhancement mode with a gate charge of 2.6 nC enabling fast and energy-efficient switching.
- Maximum power dissipation of 1.3 W supports small-signal power handling applications.
- Wide operating temperature range from -55°C to 150°C for reliable performance in harsh environments.
- Gate-source voltage tolerance of ±20 V offers robust drive margin in control circuits.
Product Description
Infineon IRLML0030TRPBF HEXFET Series N-Channel MOSFET is engineered for low-voltage switching and power control in compact surface-mount applications. With a maximum continuous drain current of 5.3 A and a drain-source voltage rating of 30 V, it is ideally suited for efficient battery-powered DC load switching, point-of-load converters, motor driver stages with modest currents, and protection or load-disconnect circuits.
The device features a low on-resistance of 27 milliohms, which reduces conduction losses and improves overall efficiency in power management systems. Its enhancement mode channel operation, coupled with a typical gate charge of only 2.6 nanocoulombs, allows for fast switching speeds and low energy consumption in high-frequency applications.
Manufactured in a compact 3-pin SOT-23 package for surface mounting, the MOSFET supports assembly in dense electronic designs. It tolerates a gate-source voltage range of ±20 volts, providing design flexibility and durability in control environments.
Operating over a wide temperature range from -55°C to 150°C, the IRLML0030TRPBF reliably performs in demanding industrial and commercial conditions, including automotive and general-purpose electronics. Its maximum power dissipation of 1.3 watts ensures that it can handle small signal power requirements effectively.
Moderate load current capability with 5.3 A continuous drain current rating. Low-voltage rated at 30 V for safe switching in sensitive circuits. Compact SOT-23 surface-mount package supports modern PCB assembly. Efficient conduction due to low on-resistance of 27 milliohms.
Fast switching enabled by low typical gate charge of 2.6 nC. Wide thermal range from -55°C to 150°C for harsh environments. Robust gate-source voltage tolerance of ±20 V for drive safety.
This MOSFET is well suited for industrial, laboratory, construction, automotive electronics, and consumer electronic applications where low voltage power switching efficiency and reliability are critical. The compact footprint and robust enhancement-mode design make it an excellent choice for embedded control boards, motor controllers, and load management circuitry in advanced electronic systems.
Explore our wide selection of semiconductor components at EnvMart for premium quality power MOSFETs like the Infineon IRLML0030TRPBF and other discrete semiconductors suitable for multiple industrial and commercial usages.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.3 A.
It has a maximum drain-source voltage rating of 30 V.
This model comes in a 3-pin SOT-23 package designed for surface mounting.
The typical gate charge is 2.6 nC, which enables fast switching speeds.
The maximum power dissipation is 1.3 W, suitable for small-signal power handling applications.
It operates over a wide temperature range from -55°C to 150°C.
The low drain-source resistance is 27 mΩ, which helps in reducing conduction losses.
It features an enhancement mode N-channel design.
The SOT-23 package has a height of 1.02 mm, a width of 1.4 mm, and a length of 3.04 mm.
The gate-source voltage tolerance is ±20 V, providing a robust drive margin.
This MOSFET is suitable for battery-powered DC load switching, point-of-load converters, and motor driver stages.
The country of origin for this model is India.
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