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Vishay Switching Diode, Single, Silicon Junction, 1 A Forward Current, 400 V Reverse Voltage, 2-Pin SMA Package RS1G-E3/61T

Category Switching Diode Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 2.09mm
Length 4.5mm
Model RS1G-E3/61T
Width 2.79mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SMA
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.3V
Peak Reverse Recovery Time trr 500ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 400V

Key Features

  • The diode has a fast recovery time of 500 ns ensuring efficient switching.
  • Supports peak non-repetitive forward surge current up to 30 A.
  • Operates reliably from -55°C to 150°C operating temperature range.
  • Compact dimensions with length 4.5 mm, width 2.79 mm, and height 2.09 mm.
  • Designed for surface mount applications enhancing PCB space efficiency.
  • Constructed with silicon junction semiconductor technology for durability.
  • Ideal for power management and protection applications in electronic circuits.
  • Manufactured in China with quality alignment to Vishay semiconductor standards.

Product Description

Vishay RS1G-E3/61T is a high-performance switching diode designed for efficient fast recovery operations in semiconductor electronic components. This single diode features a silicon junction construction optimized for switch mode power supplies, inverters, and freewheeling circuits.

Operating at a maximum forward current of 1 A and capable of withstanding a peak reverse repetitive voltage of 400 V, it suits a variety of industrial and commercial electronic assemblies. The diode package utilizes an industry-standard 2-pin SMA surface mount form factor, facilitating compact and reliable PCB integration.

With a peak reverse recovery time of just 500 ns, the diode offers rapid switching response, reducing power loss and electromagnetic interference. It supports high surge current capacity with a peak non-repetitive forward surge current rating of 30 A, ensuring robustness under transient conditions.

The device maintains stable performance across a wide temperature operational span from -55°C to 150°C, making it suitable for diverse environments including industrial automation, power supply regulation, and general electronics manufacturing.

Its compact physical dimensions (length 4.5 mm, width 2.79 mm, height 2.09 mm) contribute to space-saving layouts on printed circuit boards in applications such as telecommunications equipment, automotive electronics (non-automotive standard), and consumer electronics.

The diode is RoHS compliant and adheres to Vishay’s semiconductor quality guidelines. Manufactured in China, assuring consistent quality and supply chain reliability. Suitable for repair, replacement, or new designs requiring a reliable fast recovery Switching Diode.

Vishay Switching Diode, Single, Silicon Junction, 1 A Forward Current, 400 V Reverse Voltage, 2-Pin SMA Package RS1G-E3/61T
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Frequently Asked Questions

The maximum forward current of this diode is 1 A.

It can withstand a peak reverse repetitive voltage of 400 V.

The peak reverse recovery time is 500 ns, ensuring efficient switching performance.

The diode has dimensions of 4.5 mm in length, 2.79 mm in width, and 2.09 mm in height.

It operates reliably within a temperature range of -55°C to 150°C.

This model uses a 2-pin SMA surface mount package type.

The diode supports a peak non-repetitive forward surge current of up to 30 A.

It is suitable for power management and protection applications in electronic circuits.

Yes, this diode is RoHS compliant, adhering to environmental regulations.

It is constructed with silicon junction semiconductor technology.

This diode is manufactured in China, ensuring consistent quality.

The mounting type for this model is surface mount, enhancing PCB space efficiency.

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