World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

Nexperia N-Channel Enhancement MOSFET 60 V, 1.5 A, 3-Pin SOT-23 PMV230ENEAR

Free Delivery in India | Lowest Global Shipping Charges

Nexperia N-Channel Enhancement MOSFET 60 V, 1.5 A, 3-Pin SOT-23 PMV230ENEAR

Name: Nexperia N-Channel Enhancement MOSFET 60 V, 1.5 A, 3-Pin SOT-23 PMV230ENEAR
Brand: Nexperia
SKU: 215027
Price: 0.13 USD
Availability: InStock



Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	3mm
Model	PMV230ENEAR
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	1.5A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	222mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.45W
Typical Gate Charge Qg @ Vgs	3.9nC
Maximum Gate Source Voltage Vgs	20V

Key Features

This device features a maximum continuous drain current of 1.5 amperes.
Maximum drain-source voltage is rated at 60 volts for reliable switching.
It incorporates trench MOSFET technology for very fast switching and high efficiency.
Surface-mount device packaged in compact SOT-23 (TO-236AB) for space-saving PCB layouts.
Maximum drain-source resistance (Rds) of 222 milliohms ensures low power loss.
Typical gate charge at Vgs is 3.9 nanocoulombs for efficient gate driving.
Capable of dissipating up to 1.45 watts of power during operation.
Operating temperature range from -55°C up to 150°C for robust thermal performance.

Product Description

Nexperia PMV230ENEAR is a 60 V, N-channel enhancement mode MOSFET transistor designed for high efficiency switching applications. Housed in a small SOT-23 (TO-236AB) surface-mounted plastic package, it benefits from trench MOSFET technology that offers very fast switching speeds and low conduction losses.

The transistor supports a maximum continuous drain current of 1.5 A and a maximum drain-source resistance of 222 mΩ, contributing to efficient power management in circuits. Its typical gate charge of 3.9 nC allows for improved switching performance with lower gate drive power consumption.

This device can safely operate within the temperature range of -55°C to 150°C, supporting challenging thermal environments often found in industrial and automotive applications. The PMV230ENEAR complies with the automotive industry standard AEC-Q101, highlighting its reliability and suitability in automotive electronics.

Its ESD protection rating exceeds 2 kV (Human Body Model), ensuring robust protection against electrostatic events during handling and operation. The compact SOT-23 packaging makes it ideal for space-constrained printed circuit boards, facilitating applications such as relay drivers, low-side switches, and high-speed line drivers.

Compact surface-mount SOT-23 package for space-saving designs. Trench MOSFET technology for high speed and efficiency. Wide operating temperature range of -55°C to 150°C. Automotive standard AEC-Q101 qualified for quality assurance.

ESD protection greater than 2 kV Human Body Model.

This transistor is widely used in industrial, automotive, consumer electronics, and telecommunications sectors, providing reliable switching functionality and power management. For further exploration of related MOSFET components, browse the Electronics & Electricals category on EnvMart.