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Nexperia N-Channel Enhancement MOSFET, 20 V, 4.7 A, 3-Pin SOT-23 Package PMV28UNEAR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | PMV28UNEAR |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.7A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.9W |
| Typical Gate Charge Qg @ Vgs | 6.2nC |
| Maximum Gate Source Voltage Vgs | 8V |
Key Features
- Features an enhancement mode N-channel configuration for efficient power management.
- Rated for maximum continuous drain current of 4.7 amperes and drain-source voltage of 20 volts.
- Constructed in a small surface-mount SOT-23 package suitable for compact PCB assemblies.
- Integrates trench MOSFET technology for fast switching and low resistance.
- Designed to operate reliably from -55°C up to 150°C operating temperatures.
- Includes electrostatic discharge protection exceeding 2 kV HBM standards.
- AEC-Q101 qualified for automotive applications ensuring high reliability.
- Maximum power dissipation of 3.9 watts optimizes thermal management.
Product Description
Nexperia PMV28UNEAR is a high-quality N-channel enhancement mode MOSFET designed to deliver efficient and reliable switching performance in a compact 3-pin SOT-23 surface-mount package. It features a maximum continuous drain current of 4.7 A and a maximum drain-source voltage of 20 V, making it suitable for a wide range of low-voltage power switching applications.
This device uses advanced trench MOSFET technology, offering low on-resistance of 70 milliohms and very fast switching capabilities, which helps in reducing power losses and improving overall system efficiency. Electrostatic discharge protection greater than 2 kV HBM ensures device robustness during handling and operation.
Certified to the automotive AEC-Q101 standard, the PMV28UNEAR is engineered to withstand harsh automotive environments with an operating temperature range from -55°C to 150°C. The transistor supports a maximum power dissipation of 3.9 watts, providing good thermal management for demanding circuits.
The device’s typical gate charge of 6.2 nC at the recommended gate voltage enables low switching losses and efficient driving in switching power supplies, automotive electronics, and industrial control systems.
Enhancement mode N-channel MOSFET technology ensures efficient switching. Max continuous drain current of 4.7 A and drain-source voltage of 20 V. Compact and lightweight 3-pin SOT-23 package suitable for surface mount PCB designs.
Low on-resistance of 70 milliohms minimizes conduction losses. Operating temperature range from -55°C to 150°C supports thermal demanding environments. Electrostatic discharge protection > 2 kV HBM enhances device reliability.
AEC-Q101 qualification suitable for automotive-grade applications. Maximum power dissipation rating of 3.9 W enables effective thermal handling. Typical gate charge (Qg) of 6.2 nC reduces switching losses.
This MOSFET is ideal for automotive electronics, power management modules, consumer electronics, industrial automation, and other applications requiring compact, fast-switching, and reliable transistors. Its small footprint and certified automotive grade ensure performance consistency in harsh environments.
Explore the full range of MOSFET devices on EnvMart for compatible power components and design support tools.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.7 A.
It can handle a maximum drain-source voltage of 20 V.
The operating temperature range is from -55°C to 150°C.
This MOSFET is packaged in a compact 3-pin SOT-23 surface-mount configuration.
The typical gate charge at the recommended gate voltage is 6.2 nC.
The maximum power dissipation rating is 3.9 W.
The maximum drain-source resistance is 70 milliohms.
Yes, it is AEC-Q101 qualified for automotive applications.
It features an N-channel enhancement mode configuration.
It includes electrostatic discharge protection exceeding 2 kV HBM standards.
The dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height.
This model is suitable for automotive electronics, power management modules, consumer electronics, and industrial automation.
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