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Nexperia N-Channel MOSFET, 3.1 A Continuous Drain Current, 60 V Maximum Drain Source Voltage, 3-Pin SOT-23 PMV55ENEAR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | PMV55ENEAR |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.36W |
| Typical Gate Charge Qg @ Vgs | 12.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- The device operates with an enhancement mode channel for effective switching applications.
- Maximum power dissipation is rated at 8.36 W for demanding thermal environments.
- It is AEC-Q101 qualified, ensuring reliability in automotive and industrial uses.
- Typical gate charge of 12.7 nC at Vgs supports fast switching performance.
- Surface mount package type SOT-23 facilitates easy PCB integration.
- Designed for operation from temperatures as low as -55°C up to 150°C maximum.
- Maximum drain-source resistance is 120 mΩ, ensuring low conduction losses.
- Device includes ElectroStatic Discharge protection greater than 2 kV HBM.
Product Description
Nexperia PMV55ENEAR is a high-performance N-Channel MOSFET designed for efficient power switching in automotive, industrial, and electronic applications. This enhancement mode Field Effect Transistor is housed in a compact 3-Pin SOT-23 surface-mounted device, utilizing trench MOSFET technology for fast and reliable switching.
Featuring a maximum continuous drain current of 3.1 A and a maximum drain-source voltage rating of 60 V, this MOSFET is suited for medium power applications including power control, signal amplification, and automotive systems requiring compliance with AEC-Q101 standards.
The device supports operation in harsh environments with a broad temperature range from -55°C to 150°C, and maximum power dissipation of 8.36 W aids in maintaining thermal stability. Its small size (length 3 mm, width 1.4 mm, height 1 mm) enables compact PCB layouts.
Additional technical characteristics include a typical gate charge of 12.7 nC at Vgs and a maximum gate-source voltage rating of 20 V, providing efficient gate drive requirements. The maximum drain-source on-resistance is 120 milliohms contributing to energy-efficient conduction.
Nexperia’s extensive automotive-qualified MOSFET portfolio ensures reliable performance in demanding applications including engine management, body electronics, chassis control, and power distribution.
The product is AEC-Q101 compliant ensuring suitability for automotive specification requirements. It delivers very fast switching speeds enabled by trench MOSFET technology. The device includes robust ElectroStatic Discharge (ESD) protection surpassing 2 kV HBM to safeguard against voltage transients.
Its surface mount package enhances installation ease and manufacturing efficiency. Low Rds(on) minimizes power losses in high-frequency switching circuits. Explore the range of Nexperia power MOSFET components on EnvMart for industrial, automotive, and electronic design applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.1 A.
The maximum drain-source voltage rating is 60 V.
The typical gate charge at Vgs is 12.7 nC.
This model comes in a 3-Pin SOT-23 surface mount package type.
The maximum power dissipation is rated at 8.36 W.
The maximum gate-source voltage rating is 20 V.
The maximum drain-source on-resistance is 120 mΩ.
It operates within a temperature range from -55°C to 150°C.
Yes, it is AEC-Q101 qualified, ensuring reliability in automotive applications.
The dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height.
This model uses an enhancement mode N-channel.
It is suitable for power control, signal amplification, and automotive systems.
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