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Infineon IST N-Channel MOSFET, 475 A, 40 V Enhancement Mode, 5-Pin HSOF Package IST006N04NM6AUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 7.2mm |
| Length | 6.9mm |
| Model | IST006N04NM6AUMA1 |
| Width | 2.4mm |
| Mount Type | Surface |
| Series | IST |
| Maximum Operating Temperature | 175°C |
| Package Type | HSOF |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 475A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 178nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current of 475 A suitable for high power applications.
- Maximum drain-source voltage rating of 40 V for robust operation.
- Very low on-resistance (Rds(on)) of 0.6 milliohms ensures high efficiency.
- Surface mount HSOF package with 5 pins provides compact footprint.
- Enhancement mode N-channel device optimized for low voltage motor drives.
- High maximum power dissipation of 250 W for thermal handling.
- Wide operating temperature range from -55°C to 175°C ensures reliability.
- Typical gate charge of 178 nC at Vgs makes driving efficient.
Product Description
Infineon IST006N04NM6AUMA1 is a high-performance N-channel MOSFET designed for demanding electronic power applications. It features a maximum continuous drain current of 475 A and a maximum drain-source voltage of 40 V, making it suitable for high current low voltage scenarios. The device uses enhancement mode channel operation and comes in a compact, surface mount 5-pin HSOF package with dimensions of approximately 7.2mm height, 6.9mm length, and 2.4mm width.
With an ultra-low drain-source resistance of 0.6 milliohms, this MOSFET ensures minimal conduction loss and high efficiency in power conversion circuits. Its high power dissipation capability of 250 W allows for effective thermal management in industrial and battery powered applications.
The device supports a wide temperature range from -55°C to 175°C, providing robustness and reliability in harsh operating environments. The typical gate charge of 178 nC at a gate-source voltage of 20 V ensures efficient switching performance, suitable for motor drives and battery protection circuits.
Additional features include 100% avalanche testing and superior thermal performance characteristics. It is ideal for use in low voltage motor drives, battery power applications, and battery formation processes in industrial, commercial, HVAC, and manufacturing settings.
Maximum continuous drain current: 475 A. Maximum drain-source voltage: 40 V. Package type: 5-pin surface mount HSOF. On-resistance (Rds(on)): 0.6 mOhm. Power dissipation: 250 W. Operating temperature range: -55°C to 175°C.
Typical gate charge: 178 nC @ Vgs. Forward voltage: 1 V. Channel type: N-channel enhancement. Designed for battery powered and motor drive applications.
This product is new and produced by Infineon, a recognized leader in semiconductor manufacturing. It provides robust performance with a focus on efficiency and reliability. Browse more MOSFET products and Infineon semiconductors on EnvMart for advanced electronic components.
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Frequently Asked Questions
The maximum continuous drain current of this model is 475 A, making it suitable for high power applications.
This MOSFET has a maximum drain-source voltage rating of 40 V, ensuring robust operation in various applications.
The on-resistance (Rds(on)) of this unit is 0.6 milliohms, which helps in achieving high efficiency in power conversion circuits.
It has a maximum power dissipation capability of 250 W, allowing for effective thermal management in applications.
The typical gate charge is 178 nC at a gate-source voltage of 20 V, facilitating efficient switching performance.
The dimensions of the 5-pin HSOF package are approximately 7.2 mm in height, 6.9 mm in length, and 2.4 mm in width.
This model operates within a wide temperature range from -55°C to 175°C, ensuring reliability in harsh environments.
It uses an enhancement mode N-channel, which is optimized for low voltage motor drives and battery applications.
It is designed for low voltage motor drives, battery power applications, and battery formation processes in various industrial settings.
The maximum gate-source voltage for this device is 20 V, which is important for its operation in power circuits.
The forward voltage of this model is 1 V, which is relevant for its performance in specific applications.
The country of origin for this MOSFET is India, reflecting its manufacturing location.
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