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onsemi Silicon Junction Switching Diode, Common Cathode, 18 A Forward Current, 200 V Peak Reverse Voltage MURB1620CTT4G

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 4.83mm
Length 10.29mm
Model MURB1620CTT4G
Width 9.65mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type TO-263
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 3
Diode Configuration Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 975mV
Peak Reverse Recovery Time trr 35ns
Maximum Forward Current If 18A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • This diode uses a common cathode configuration for switching performance.
  • It offers a maximum forward voltage of 975 mV and a peak reverse recovery time of 35 ns.
  • Designed to operate between -65°C and 175°C, suitable for harsh environmental conditions.
  • Capable of handling a peak non-repetitive forward surge current of 100 A.
  • Compact dimensions of 10.29 mm length, 9.65 mm width, and 4.83 mm height.
  • Ideal for power electronics requiring robust surface mount rectification.

Product Description

onsemi MURB1620CTT4G Silicon Junction Switching Diode is engineered for industrial and electronic component applications where robust power switching is required. This diode incorporates a common cathode junction providing reliable switching capabilities with a high maximum forward current rating of 18 A.

Its surface mount TO-263 package allows for efficient PCB integration, making it ideal for power and switching circuits in various industrial, manufacturing, and electronic systems. The device withstands a peak reverse repetitive voltage of 200 V, suitable for demanding electrical environments.

Operating temperature ranges from -65°C to 175°C enable usage in harsh and variable temperature environments, accommodating automotive and industrial temperature ranges despite not being automotive qualified. Its peak reverse recovery time of 35 ns ensures fast switching performance suitable for semiconductor switching and power control devices.

The diode’s maximum forward voltage is 975 mV, balancing efficiency and power dissipation in circuits. With a peak non-repetitive forward surge current rating of 100 A, it can tolerate transient surges commonly encountered in power electronics.

Physical dimensions are compact with a length of 10.29 mm, width of 9.65 mm, and height of 4.83 mm, allowing for space-efficient assembly. This makes it well-suited for assembly in compact power supplies, adapters, and switching diode arrays used in industrial automation, power supplies, and electrical distribution modules.

This diode uses a common cathode configuration for switching performance. It offers a maximum forward voltage of 975 mV and a peak reverse recovery time of 35 ns. Designed to operate between -65°C and 175°C, suitable for harsh environmental conditions.

Capable of handling a peak non-repetitive forward surge current of 100 A. Compact dimensions of 10.29 mm length, 9.65 mm width, and 4.83 mm height. Ideal for power electronics requiring robust surface mount rectification.

This product is a new semiconductor component from onsemi, renowned for quality in the discrete semiconductor category. It is applicable in electronics manufacturing, power control, and switching applications across industries such as automotive, industrial controls, and electrical equipment manufacturing. Explore more semiconductor and switching diode options with onsemi and related product families on EnvMart.

Explore more products in our Switching Diodes category.

onsemi Silicon Junction Switching Diode, Common Cathode, 18 A Forward Current, 200 V Peak Reverse Voltage MURB1620CTT4G
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