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Taiwan Semiconductor 1-Element Uni-Directional TVS Diode 400 W 2-Pin DO-214AC SMAJ58A R3

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Taiwan Semiconductor 1-Element Uni-Directional TVS Diode 400 W 2-Pin DO-214AC SMAJ58A R3

Name: Taiwan Semiconductor 1-Element Uni-Directional TVS Diode 400 W 2-Pin DO-214AC SMAJ58A R3
Brand: Taiwan Semiconductor
SKU: 211963

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Category TVS Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	India
Brand	Taiwan Semiconductor
Height	2.3mm
Length	4.6mm
Model	SMAJ58A R3
Width	2.83mm
Mount Type	Surface
Series	SMAJ
Maximum Operating Temperature	150°C
Package Type	DO-214AC (SMA)
Minimum Operating Temperature	-55°C
Pin Count	2
Number of Elements per Chip	1
Clamping Voltage VC	93.6V
Diode Configuration	Single
Direction Type	Uni-Directional
Minimum Breakdown Voltage Vbr	64.4V
Maximum Reverse Stand-off Voltage Vwm	58V
Peak Pulse Power Dissipation Pppm	400W
Test Current It	1mA
Maximum Peak Pulse Current Ippm	4.3A
Maximum Reverse Leakage Current	5μA

Key Features

The diode features a uni-directional configuration for reliable voltage clamping.
Maintenance of system protection is guaranteed by a minimum breakdown voltage of 64.4 V.
It supports a maximum reverse stand-off voltage of 58 V with a clamping voltage of 93.6 V.
Rated for operation across a temperature range of -55°C to 150°C for durability in harsh environments.
Compact surface mount design with dimensions 4.6 mm length, 2.83 mm width, and 2.3 mm height.
Suitable for ESD protection with peak pulse current capability of 4.3 A and low maximum reverse leakage current of 5 μA.
The device complies with the SMAJ series standards and is ideal for circuit protection applications.

Product Description

Taiwan Semiconductor SMAJ58A R3 is a 1-Element Uni-Directional TVS Diode designed for robust transient voltage suppression in sensitive electronic circuits. It delivers a peak pulse power dissipation of 400 W, providing effective protection against voltage spikes and electrostatic discharge (ESD).

This diode is configured as a single uni-directional element with a minimum breakdown voltage (Vbr) of 64.4 V and a maximum reverse stand-off voltage (Vwm) of 58 V, ensuring precise voltage clamping at a maximum clamping voltage (Vc) of 93.6 V. It is rated for a maximum peak pulse current (Ippm) of 4.3 A, supporting transient voltage absorption in high-stress electrical environments.

The component follows the SMAJ series with a compact surface mount DO-214AC (SMA) package, suitable for high-density PCB layouts. Its physical dimensions are 4.6 mm length, 2.83 mm width, and 2.3 mm height, allowing small footprint integration.

Performance is maintained across a broad temperature range from -55°C to 150°C, making it reliable for industrial, commercial, automotive, and telecommunications applications. The device has a low maximum reverse leakage current of 5 μA and provides ESD protection, enhancing equipment longevity and safety.

These TVS diodes are ideal for transient suppression and surge protection in discrete semiconductor circuits, safeguarding sensitive components from voltage surges. The diode features a uni-directional configuration for reliable voltage clamping.

Maintenance of system protection is guaranteed by a minimum breakdown voltage of 64.4 V. It supports a maximum reverse stand-off voltage of 58 V with a clamping voltage of 93.6 V. Rated for operation across a temperature range of -55°C to 150°C for durability in harsh environments.

Compact surface mount design with dimensions 4.6 mm length, 2.83 mm width, and 2.3 mm height. Suitable for ESD protection with peak pulse current capability of 4.3 A and low maximum reverse leakage current of 5 μA. The device complies with the SMAJ series standards and is ideal for circuit protection applications.

Browse the TVS Diode category for more Taiwan Semiconductor devices suitable for efficient circuit protection and transient absorption solutions.