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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP24NF10 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 26A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 85W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STP24NF10 is a high-performance N-Channel STripFET™ MOSFET designed for efficient power switching applications. It features an enhancement mode channel with a maximum continuous drain current of 26 amperes and can withstand a maximum drain-source voltage of 100 volts. The device is housed in a sturdy TO-220 package with 3 pins, allowing through-hole mounting on printed circuit boards for ease of assembly in industrial, automotive, and consumer electronic circuits.
This MOSFET supports a maximum power dissipation of 85 watts and operates reliably within a broad temperature range from -55°C up to 175°C, making it suitable for demanding environments. With a low maximum drain-source resistance (Rds(on)) of 70 milliohms, it delivers efficient current conduction with minimal heat generation. The typical gate charge of 30 nanocoulombs facilitates fast switching, enhancing overall circuit efficiency.
The maximum gate-source voltage rating of -20 V to +20 V provides protection against voltage transients, ensuring stable operation. Its compact physical dimensions with a height of 9.15 mm and length of 10.4 mm help in minimizing space on circuit boards.
This MOSFET is ideal for use in power management, motor control, switching power supplies, and general purpose amplification within industrial and electronic applications. Its robustness and performance make it a reliable choice for high-current load switching.
Enhancement mode N-Channel for efficient switching. Supports continuous drain current up to 26A. Maximum drain-source voltage of 100 V ensures strong voltage handling. TO-220 package allows through-hole mount style installation.
Maximum power dissipation capability of 85 W supports high load applications. Wide operating temperature range including low temperature suitability. Low Rds(on) of 70 mΩ for minimal power loss and heat generation. Typical gate charge of 30 nC enables rapid switching transitions.
Safe gate-source voltage window from -20 V to +20 V protects device integrity. Compact size facilitating integration into limited space arrangements. Explore STMicroelectronics components and enhance your designs with reliable MOSFET devices available at EnvMart.
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