STMicroelectronics N-Channel MDmesh SuperMESH MOSFET 3.5A 1kV Enhancement 3-Pin TO-220 STF5NK100Z

STMicroelectronics STF5NK100Z is an N-Channel MDmesh SuperMESH MOSFET transistor designed for power and switching applications offering continuous drain current up to 3.5 A and a maximum drain-source voltage rating of 1 kV. Packaged in a 3-pin TO-220 format, it supports through-hole mounting for ease of application in various electronic circuits.

This enhancement mode MOSFET exhibits a maximum power dissipation of 30 W, suitable for moderate power handling. The device operates reliably across a broad temperature range from -55°C to 150°C, ensuring performance stability in industrial and commercial environments.

The typical gate charge at gate-source voltage provides quick switching capability, with maximum gate-source voltages allowed between -30 V and +30 V enabling flexible gate control. Its low drain-source resistance of 3.7 Ω results in minimal conduction losses, improving energy efficiency in power management systems.

Dimensionally, the device measures 10.4 mm in length, 9.3 mm in height, and 4.6 mm in width, facilitating compact layouts in power electronics assemblies. As part of the MDmesh SuperMESH series, this MOSFET benefits from advanced chip architecture optimized for low losses and rugged operation.

Ideal for use in industrial electronics, power converters, motor controllers, and general switching applications, the STF5NK100Z provides robust performance. It fits applications requiring durable components with solid thermal and electrical characteristics.

The package contents consist of one MOSFET device per unit.

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Capable of 3.5 A maximum continuous drain current at 1 kV voltage. Enhancement channel mode ensures efficient switching performance. Compact TO-220 package with 3 pins suitable for through hole mounting. Maximum power dissipation is 30 W for reliable thermal handling.

Wide operating temperature range from -55°C to 150°C permits harsh environment use. Typical gate charge is 42 nC at Vgs for responsive gate drive. Maximum gate-source voltage ranges from -30 V to +30 V for control flexibility.

Low drain-source resistance of 3.7 Ω minimizes conduction losses. Forward voltage of 1.3 V under forward conduction conditions. Dimensions of 10.4 mm length, 9.3 mm height, and 4.6 mm width support compact PCB design. Visit EnvMart to check detailed specifications and additional product offerings from STMicroelectronics.