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Infineon STripFET II N-Channel MOSFET, 120A, 100V, Enhancement Mode, 3-Pin TO-263 STB120NF10T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB120NF10T4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 10.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 312W |
| Typical Gate Charge Qg @ Vgs | 172nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-Channel MOSFET, 127 A, 100 V, 3-Pin D2PAK Infineon IRFS4310ZPBFBrand | Infineon |
Key Features
- Maximum continuous drain current is 120 A for reliable high current handling.
- Drain-Source voltage rating of 100 V ensures suitability for medium voltage applications.
- Ultra-low on-resistance of 10.5 mΩ reduces conduction losses.
- Typical gate charge of 172 nC facilitates efficient switching performance.
- Maximum power dissipation of 312 W supports high thermal loads.
- Operating temperature range from -55°C to 175°C for robust performance.
- Package type TO-263 designed for surface mounting on PCBs.
- Maximum gate-source voltage rating of ±20 V protects the device from gate overstress.
Product Description
STMicroelectronics STB120NF10T4 is a high performance N-Channel MOSFET from the STripFET™ II series, designed for power switching applications that require efficient conduction and switching characteristics.
With a maximum continuous drain current of 120 A and drain-source voltage rating of 100 V, it caters to demanding industrial, electronic, and power management applications where high current handling and reliability are critical.
The device features an enhancement mode channel and is supplied in a robust 3-pin TO-263 surface mount package, facilitating easy integration onto PCB assemblies.
Its ultra-low on-resistance of 10.5 milliohms and typical gate charge of 172 nanocoulombs enable low conduction and switching losses, improving overall system efficiency and thermal management.
This MOSFET can dissipate up to 312 W of power and operates reliably in extreme temperature ranges from -55°C to 175°C, making it suitable for harsh industrial and automotive environments.
Maximum continuous drain current: 120 A. Drain-source voltage rating: 100 V. Ultra-low on-resistance: 10.5 mΩ. Typical gate charge: 172 nC. Maximum power dissipation: 312 W. Operating temperature range: -55°C to 175°C. Package type: TO-263, surface mount.
Maximum gate-source voltage: -20 V to +20 V.
This STMicroelectronics STripFET II MOSFET is ideal for industrial power electronics, switching regulators, motor drives, and other applications requiring efficient and reliable high-current MOSFET switching performance.
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Frequently Asked Questions
The maximum continuous drain current of this model is 120 A, making it suitable for high current handling applications.
This MOSFET has a drain-source voltage rating of 100 V, ensuring its suitability for medium voltage applications.
It features an ultra-low on-resistance of 10.5 mΩ, which helps reduce conduction losses during operation.
The typical gate charge for this MOSFET is 172 nC, facilitating efficient switching performance.
This model can dissipate up to 312 W of power, supporting high thermal loads in various applications.
It operates reliably within a temperature range of -55°C to 175°C, suitable for harsh environments.
The device is supplied in a 3-pin TO-263 surface mount package, designed for easy integration onto PCBs.
The maximum gate-source voltage rating for this model is ±20 V, which protects the device from gate overstress.
This MOSFET is ideal for industrial power electronics, switching regulators, and motor drives, requiring efficient high-current switching.
The dimensions of this model are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
This model features an N-channel type, which is common for high-efficiency switching applications.
It belongs to the STripFET II series, designed for power switching applications with efficient conduction characteristics.
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