Semikron Danfoss N-Channel IGBT Module 232 A 1200 V 7-Pin SEMITRANS Panel SKM150GB12T4

Semikron Danfoss SKM150GB12T4 N-Channel IGBT Module is a high-performance power semiconductor device engineered to deliver reliable and efficient switching performance for demanding industrial applications. Rated at 232 A continuous collector current and 1200 V maximum collector-emitter voltage, this IGBT module is built using two series-connected IGBT transistors housed in a compact 7-pin SEMITRANS package designed for panel mounting.

The SEIMTOP® package incorporates an insulated copper baseplate utilizing Direct Bonded Copper technology, enhancing thermal conductivity and ensuring durability under high load conditions. It supports switching frequencies up to 12 kHz, making it well-suited for AC inverter motor drives, Uninterruptible Power Supplies (UPS), and other power switching applications where high efficiency and fast switching speeds are critical.

The module operates across a wide temperature range from -40°C to 175°C, offering resilience in harsh environments. Electrical characteristics include a maximum gate-emitter voltage of 20 V and typical saturation voltage of 2.05 V under maximum collector current conditions. Compact physical dimensions of 94 mm length, 34 mm width, and 30.1 mm height enable flexible panel integration in industrial equipment.

Manufactured in Slovakia, the SKM150GB12T4 module meets high manufacturing standards but does not carry specific certifications or automotive standards. It is intended for industrial, manufacturing, HVAC, and power electronics applications requiring robust and efficient IGBT modules.

Features dual IGBT Modules with series-connected half bridge configuration. Compact SEMITOP® package suitable for switching frequencies up to 12kHz. Insulated copper baseplate with Direct Bonded Copper technology for enhanced thermal performance.

Designed for panel mount applications with a 7-pin SEMITRANS package. Robust thermal range with minimum operating temperature of -40°C and maximum of 175°C. Maximum gate emitter voltage rating of 20 V and collector emitter saturation voltage at 2.05 V.

Dimensions of 94 mm length, 34 mm width, and 30.1 mm height for compact installation. Manufactured in Slovakia ensuring stringent quality standards. Explore more semiconductor modules including IGBTs from Semikron Danfoss in the Electronics & Electricals category on EnvMart.