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Semikron Danfoss N-Channel Fast IGBT4 Module 232A 1200V 5-Pin SEMITRANS2 Surface Mount SKM150GAL12T4

Category IGBT Module Brand Semikron Danfoss Condition New

Specifications

Country of Origin India
Brand Semikron Danfoss
Height 30.1mm
Length 94mm
Model SKM150GAL12T4
Width 34mm
Mount Type Surface
Series GAL
Maximum Operating Temperature 175°C
Package Type SEMITRANS2
Minimum Operating Temperature -40°C
Standards/Approvals IEC 60747-1
Pin Count 5
Maximum Continuous Collector Current Ic 232A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2.4V
Channel Type N
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • The module uses the SEMITRANS2 package with surface mount.
  • Contains 5 pins with N-channel configuration for fast switching capabilities.
  • Operates within a temperature range from -40°C to 175°C allowing reliable performance.
  • Features a maximum collector emitter saturation voltage of 2.4 V for efficient conduction.
  • Maximum gate emitter voltage is 20 V ensuring robust gate control.
  • Module dimensions measure 94 mm in length, 34 mm in width, and 30.1 mm in height.
  • Adheres to IEC 60747-1 standards ensuring quality and reliability.
  • Part of the GAL series optimized for industrial applications requiring high power switching.

Product Description

Semikron Danfoss SKM150GAL12T4 is an N-Channel Fast IGBT4 Module designed for industrial applications requiring high efficiency and rapid switching. It operates at a maximum continuous collector current (Ic) of 232 A and is rated for a maximum collector emitter voltage (Vceo) of 1200 V. Packaged in SEMITRANS2 and designed for surface mounting, this module ensures robust and reliable power switching.

The device features a 5-pin configuration optimized for fast switching, with a switching speed of 180 ns, allowing precise control in power conversion systems. It can operate effectively in environments ranging from -40°C up to 175°C, maintaining performance in demanding industrial conditions.

Key electrical parameters include a maximum collector emitter saturation voltage (VceSAT) of 2.4 V and a maximum gate emitter voltage (VGEO) of 20 V, which aid in minimizing conduction losses and enhancing gate control.

Physically, the module measures 94 mm in length, 34 mm in width, and 30.1 mm in height, facilitating integration into power electronic assemblies while complying with IEC 60747-1 standards that ensure safety and performance reliability.

This IGBT module is part of the GAL series and is widely used in industrial power electronics, motor drives, power supplies, and renewable energy systems where efficient high power switching is critical. The combination of fast switching, high current capacity, and reliable operation temperature range makes it suitable for a wide range of commercial and industrial applications.

The module uses the SEMITRANS2 package with surface mount. Contains 5 pins with N-channel configuration for fast switching capabilities. Operates within a temperature range from -40°C to 175°C allowing reliable performance.

Features a maximum collector emitter saturation voltage of 2.4 V for efficient conduction. Maximum gate emitter voltage is 20 V ensuring robust gate control. Module dimensions measure 94 mm in length, 34 mm in width, and 30.1 mm in height.

Adheres to IEC 60747-1 standards ensuring quality and reliability. Part of the GAL series optimized for industrial applications requiring high power switching. This module is ideal for industrial, power electronics, and drive applications.

Explore more IGBT Modules and power electronics components on EnvMart for your industrial or manufacturing project needs.

Semikron Danfoss N-Channel Fast IGBT4 Module 232A 1200V 5-Pin SEMITRANS2 Surface Mount SKM150GAL12T4
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