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Taiwan Semiconductor 30 V 200 mA Surface Mount Schottky Diode 3-Pin SOT-23 BAT54A RF

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Taiwan Semiconductor 30 V 200 mA Surface Mount Schottky Diode 3-Pin SOT-23 BAT54A RF

Name: Taiwan Semiconductor 30 V 200 mA Surface Mount Schottky Diode 3-Pin SOT-23 BAT54A RF
Brand: Taiwan Semiconductor
SKU: 211894
Price: 0.04 USD
Availability: InStock

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Category Schottky Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	China
Brand	Taiwan Semiconductor
Height	0.95mm
Length	3.05mm
Model	BAT54A RF
Width	1.4mm
Mount Type	Surface
Series	BAT54
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Continuous Forward Current If	200mA
Peak Reverse Repetitive Voltage Vrrm	30V
Diode Configuration	Common Anode
Rectifier Type	Schottky
Peak Reverse Current Ir	2μA
Peak Non-Repetitive Forward Surge Current Ifsm	600mA
Maximum Forward Voltage Vf	1V
Peak Reverse Recovery Time trr	5ns
onsemi 30V 200mA, Dual Schottky Diode, 3-Pin SOT-23 BAT54ABrand	ON Semiconductor

Key Features

This diode supports a maximum continuous forward current of 200 mA.
The peak reverse repetitive voltage is rated at 30 V, suitable for low voltage circuits.
It features a common anode diode configuration and Schottky rectifier type for fast switching.
The diode package type is SOT-23 with a compact 3-pin configuration.
Operating temperature ranges from -55°C to 150°C, ensuring reliable performance in various environments.
Forward voltage drop is low at a maximum of 1 V, improving energy efficiency.
The diode has a peak reverse current of 2 μA limiting leakage during operation.
It offers rapid reverse recovery time of 5 ns, suitable for efficient switching applications.

Product Description

Taiwan Semiconductor BAT54A RF is a low-voltage, surface mount Schottky diode ideal for fast switching and low power loss applications. This 3-pin SOT-23 packaged diode supports a maximum continuous forward current of 200 mA and a peak reverse repetitive voltage of 30 V, making it suitable for various electronic circuit designs requiring efficient rectification.

Due to its common anode configuration and Schottky barrier technology, this diode exhibits low forward voltage drop (max 1 V) and minimal leakage current (2 μA), promoting higher energy efficiency and thermal stability.

Operating temperature from -55°C to 150°C allows it to function reliably in industrial, automotive, and consumer electronics environments, including power management circuits, switching power supplies, and signal processing.

The device's 5 ns peak reverse recovery time ensures fast switching capability essential in high-frequency circuits. Its compact dimensions (3.05 mm length, 1.4 mm width, 0.95 mm height) and surface mount package type SOT-23 are optimal for space-constrained PCB layouts.

Maximum continuous forward current of 200 mA supports moderate current handling. Peak non-repetitive forward surge current of 600 mA ensures robust transient tolerance. Common anode diode configuration simplifies circuit design.

Low forward voltage enables energy-efficient operation. Compact SOT-23 package supports automated PCB assembly. Wide operating temperature range provides application versatility. Peak reverse recovery time of 5 ns suits high-speed switching circuits.

Low peak reverse current minimizes power losses.

Taiwan Semiconductor BAT54A RF Schottky Diode is suitable for use in industrial electronics, consumer devices, power supply design, automotive electronics, and semiconductor discrete component applications. Its design optimizes performance in switching, rectification, and low voltage protection circuits.

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