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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STGP6NC60HD |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 15A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 62.5W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
STMicroelectronics STGP6NC60HD is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power-efficient and fast switching operations in industrial and electronic applications. This discrete semiconductor device integrates the low gate-drive input characteristic of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor.
The device supports a maximum continuous collector current of 15 amps and can withstand collector emitter voltages up to 600 volts, making it suitable for various DC power electronic applications. It is housed in a robust TO-220 package with a through-hole mount, providing mechanical stability and ease of installation on printed circuit boards.
Thermal management is supported with a maximum power dissipation rating of 62.5 watts and operating temperature range from -55°C to 150°C, suitable for both industrial environments and commercial electronic systems. The STGP6NC60HD features a three-pin configuration optimized for switching operations with a maximum gate emitter voltage rating of 20 volts and a collector emitter saturation voltage of 2.5 volts, ensuring efficient power transitions and minimal losses.
With compact dimensions - 4.6 mm width, 10.4 mm length, and 9.15 mm height - it is ideal for circuits where space optimization is critical. The device is not certified under automotive standards but is widely used in industrial power management, motor drives, inverters, and power supplies.
Supports a maximum continuous collector current of 15 amperes. Maximum collector emitter voltage rating of 600 volts. Housed in TO-220 package, through-hole mounting type. Maximum power dissipation up to 62.5 watts. Operating temperature range from -55°C to 150°C.
Maximum gate emitter voltage of 20 volts. Three-pin N-channel configuration. Collector emitter saturation voltage at 2.5 volts. Compact device dimensions of 4.6 mm × 10.4 mm × 9.15 mm.
This power semiconductor device is ideal for industrial, laboratory, and electronics manufacturing sectors requiring efficient switching transistors. It supports robust designs in inverters, motor drivers, power converters, and other energy management systems. STMicroelectronics' STGP6NC60HD combines performance, reliability, and compactness, making it a preferred choice for high-efficiency power electronics applications.
Browse more semiconductor components and IGBTs in EnvMart for comprehensive industrial-grade electronic components.
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