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STMicroelectronics N-Channel IGBT 15 A 600 V 3-Pin TO-220 Through Hole STGP6NC60HD

Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model STGP6NC60HD
Width 4.6mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 15A
Maximum Collector Emitter Voltage Vceo 600V
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V
Channel Type N
Maximum Power Dissipation Pd 62.5W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • Supports a maximum continuous collector current of 15 amperes.
  • Features a maximum collector emitter voltage of 600 volts for robust operation.
  • Enclosed in a TO-220 package with through-hole mount type for easy PCB integration.
  • Maximum power dissipation is rated at 62.5 watts ensuring thermal reliability.
  • Operates over a temperature range from -55°C to 150°C for wide environment adaptability.
  • Has a maximum gate emitter voltage of 20 volts allowing safe gate control.
  • Three-pin configuration designed for N-channel switching applications.
  • Maximum collector emitter saturation voltage of 2.5 volts for efficient switching performance.

Product Description

STMicroelectronics STGP6NC60HD is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power-efficient and fast switching operations in industrial and electronic applications. This discrete semiconductor device integrates the low gate-drive input characteristic of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor.

The device supports a maximum continuous collector current of 15 amps and can withstand collector emitter voltages up to 600 volts, making it suitable for various DC power electronic applications. It is housed in a robust TO-220 package with a through-hole mount, providing mechanical stability and ease of installation on printed circuit boards.

Thermal management is supported with a maximum power dissipation rating of 62.5 watts and operating temperature range from -55°C to 150°C, suitable for both industrial environments and commercial electronic systems. The STGP6NC60HD features a three-pin configuration optimized for switching operations with a maximum gate emitter voltage rating of 20 volts and a collector emitter saturation voltage of 2.5 volts, ensuring efficient power transitions and minimal losses.

With compact dimensions - 4.6 mm width, 10.4 mm length, and 9.15 mm height - it is ideal for circuits where space optimization is critical. The device is not certified under automotive standards but is widely used in industrial power management, motor drives, inverters, and power supplies.

Supports a maximum continuous collector current of 15 amperes. Maximum collector emitter voltage rating of 600 volts. Housed in TO-220 package, through-hole mounting type. Maximum power dissipation up to 62.5 watts. Operating temperature range from -55°C to 150°C.

Maximum gate emitter voltage of 20 volts. Three-pin N-channel configuration. Collector emitter saturation voltage at 2.5 volts. Compact device dimensions of 4.6 mm × 10.4 mm × 9.15 mm.

This power semiconductor device is ideal for industrial, laboratory, and electronics manufacturing sectors requiring efficient switching transistors. It supports robust designs in inverters, motor drivers, power converters, and other energy management systems. STMicroelectronics' STGP6NC60HD combines performance, reliability, and compactness, making it a preferred choice for high-efficiency power electronics applications.

Browse more semiconductor components and IGBTs in EnvMart for comprehensive industrial-grade electronic components.

STMicroelectronics N-Channel IGBT 15 A 600 V 3-Pin TO-220 Through Hole STGP6NC60HD
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