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| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 28mm |
| Length | 10mm |
| Model | TTA1452B,S4X(S |
| Width | 2.6mm |
| Mount Type | Through Hole |
| Series | TTA1452 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -80V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -80V |
| Maximum Power Dissipation Pd | 30W |
| Maximum DC Collector Current Idc | -12A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 50MHz |
The Toshiba TTA1452B,S4X(S) PNP power transistor is engineered for high-performance applications requiring reliable and efficient switching and amplification. Packaged in a 3-pin TO-220 configuration, it delivers a maximum DC collector current of -12 amperes and a maximum collector emitter voltage rating of -80 volts.
Its through-hole mount type is suitable for sturdy PCB installations and power handling. The transistor features a single configuration with PNP polarity, offering a minimum DC current gain of 40, making it ideal for enhancing current control in circuits.
With a maximum power dissipation of 30 watts and an operating temperature tolerance up to 150°C, this component is fit for demanding environments including industrial electronics, power supply circuits, and motor controls.
The device's physical dimensions (28 mm height, 10 mm length, and 2.6 mm width) contribute to compact and space-saving designs. A maximum transition frequency of 50 MHz allows it to operate efficiently in medium frequency applications.
Manufactured in Japan under strict quality standards, Toshiba ensures the transistor’s reliability and durability. This bipolar PNP transistor supports a maximum collector base voltage and maximum emitter base voltage of -80 V and -6 V respectively, making it versatile across a variety of electronic modules.
Designed for through-hole mounting in electronic circuits. Single transistor configuration providing stable PNP polarity operation. Maximum power dissipation of 30 watts ensures reliable performance under high load. Offers a maximum operating temperature up to 150°C for robust industrial applications.
Compact dimensions of 28 mm height, 10 mm length, and 2.6 mm width support efficient PCB layouts. Supports a minimum DC current gain (hFE) of 40 for effective amplification. Maximum transition frequency of 50 MHz ideal for high-frequency switching tasks.
Suitable for power and amplification needs in consumer electronics and industrial devices. Manufactured in Japan ensuring high-quality semiconductor standards.
This transistor is commonly employed in power amplifiers, switching regulators, and other electronic circuits requiring robust PNP Bipolar Transistors. Its reliability and thermal handling make it a preferred choice in industrial and consumer electronics manufacturing.
Explore a wide range of Toshiba transistors and semiconductor components at EnvMart for your electronic and industrial projects.
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