Toshiba NPN Power Transistor 12 A 80 V 30 W TO-220 Through Hole TTC3710B,S4X(S

Toshiba TTC3710B,S4X(S is a high-performance NPN power transistor designed for electronic applications requiring robust switching and amplification capabilities.

Operating with a maximum DC collector current of 12 A and a maximum collector emitter voltage of 80 V, this transistor provides reliable power handling in through hole mount configurations.

The TO-220 package design facilitates heat dissipation and easy installation on printed circuit boards. It supports a maximum power dissipation of 30 watts, enabling sustained operation under demanding loads.

The device features a single transistor configuration with a minimum DC current gain (hFE) of 40, delivering efficient current amplification with a maximum transition frequency of 80 MHz for medium frequency electronic applications.

Thermal resilience is supported by a maximum operating temperature of 150 degrees Celsius, ideal for industrial and commercial electronics operating in harsh environments. The transistor’s dimensions (28 mm height, 10 mm length, and 2.6 mm width) make it suitable for compact power electronic designs requiring dependable component sizing.

Designed for through hole mounting using a standard TO-220 package. Maximum DC collector current of 12 A ensures suitability in power control and switching. Maximum collector emitter voltage of 80 V supports a variety of industrial voltage levels.

30 W power dissipation rating offers robust thermal management. Minimum DC current gain of 40 enhances amplification efficiency. Maximum transition frequency of 80 MHz supports medium frequency signal amplification. High-temperature operation capability up to 150°C for durability in industrial conditions.

Manufactured in Japan, assuring quality compliance and reliability.

This Toshiba power transistor finds applications in industrial electronics, power supplies, motor control circuits, automotive electronics, and other commercial electronic assemblies.

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