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Nexperia N-Channel MOSFET 200 mA 60 V Enhancement 3-Pin SOT-23 BSS138AKAR

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 3mm
Model BSS138AKAR
Width 1.4mm
Mount Type Surface
Series BSS138AKA
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 200mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 4.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.06W
Typical Gate Charge Qg @ Vgs 0.39nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Enhanced performance with low maximum drain-source resistance of 4.5Ω.
  • Surface mount type designed for compact electronic applications.
  • Supports maximum power dissipation of 1.06 W.
  • Suitable for operating temperatures from -55°C to 150°C.
  • Typical gate charge of 0.39 nC at Vgs facilitates efficient switching.
  • Maximum gate-source voltage of ±20 V for reliable operation.
  • Complies with AEC-Q101 automotive standard for robustness.
  • Compact dimensions with length 3 mm, width 1.4 mm, and height 1 mm.

Product Description

Nexperia BSS138AKAR is a high-quality N-Channel MOSFET transistor designed for surface mounting in a compact 3-Pin SOT-23 package. It features a maximum continuous drain current of 200 mA and a maximum drain-source voltage rating of 60 V, supporting enhancement channel mode operation. The device exhibits a maximum drain-source resistance of 4.5Ω and a typical gate charge of 0.39 nC at gate-source voltage, enabling efficient switching in electronic circuits.

This MOSFET operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial, automotive, and consumer electronics applications. Its compliance with the AEC-Q101 automotive standard underscores its durability and quality for automotive system integration.

The device’s compact dimensions (3 mm length, 1.4 mm width, 1 mm height) facilitate high-density PCB layouts and surface mount designs. Additionally, its maximum power dissipation rating of 1.06 W and gate-source voltage tolerance of ±20 V ensure stable performance under varying electrical conditions.

This transistor is commonly used in power management circuits, switching applications, signal amplification, and load switching in electronics manufacturing and automotive industries. Its small forward voltage drop of 1.2 V helps reduce power losses and improves energy efficiency.

Enhanced performance with low drain-source resistance. Compact SOT-23 surface mount package. Supports wide temperature range for industrial use. Compliant with automotive grade AEC-Q101 standard. Suitable for power management and switching applications.

Reliable operation with ±20 V gate-source voltage tolerance. Compact size enables high-density circuit design. Low forward voltage drop ensures energy efficiency.

This product is an ideal choice for industrial and automotive embedded electronics, laboratory instrumentation, manufacturing automation, and general-purpose discrete semiconductor uses. Explore the Electronics & Electricals section at EnvMart for comprehensive semiconductor and MOSFET components from top brands including Nexperia.

Nexperia N-Channel MOSFET 200 mA 60 V Enhancement 3-Pin SOT-23 BSS138AKAR
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Frequently Asked Questions

The maximum continuous drain current for this model is 200 mA.

This MOSFET has a maximum drain-source voltage rating of 60 V.

The dimensions of this unit are 3 mm in length, 1.4 mm in width, and 1 mm in height.

The typical gate charge at gate-source voltage for the BSS138AKAR is 0.39 nC.

The maximum power dissipation for the BSS138AKAR is rated at 1.06 W.

This MOSFET operates reliably within a temperature range of -55°C to 150°C.

The maximum gate-source voltage for the BSS138AKAR is ±20 V.

The maximum drain-source resistance for this model is 4.5Ω.

Yes, it complies with the AEC-Q101 automotive standard.

This model is designed for surface mounting in a compact SOT-23 package.

It is commonly used in power management circuits, switching applications, signal amplification, and load switching.

This MOSFET features an N-channel enhancement mode operation.

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