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onsemi 1-Element Bi-Directional ESD Protection Diode Surface Mount X2-DFN 0.3W Peak Pulse Power SZESD7410N2T5G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.35mm |
| Length | 1mm |
| Model | SZESD7410N2T5G |
| Width | 0.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | X2-DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 20V |
| Automotive Standard | AEC-Q101 |
| Diode Configuration | Single |
| Direction Type | Bi-Directional |
| Minimum Breakdown Voltage Vbr | 10V |
| Maximum Reverse Stand-off Voltage Vwm | 9.5V |
| Peak Pulse Power Dissipation Pppm | 0.3W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 16A |
| Maximum Reverse Leakage Current | 1μA |
Key Features
- Single diode configuration ensuring bi-directional ESD protection.
- Minimum breakdown voltage of 10 V for effective voltage clamping.
- Compact surface mount X2-DFN package with dimensions 1 mm x 0.6 mm.
- Operates reliably between -55°C and 150°C temperature range.
- Peak pulse power dissipation of 0.3 W with a maximum peak pulse current of 16 A.
- Clamping voltage of 20 V delivers robust transient voltage suppression.
- Compliance with automotive AEC-Q101 standard for quality assurance.
- Low maximum reverse leakage current of 1 µA minimizing power loss.
Product Description
onsemi SZESD7410N2T5G is a 1-element, bi-directional ESD protection diode designed to safeguard sensitive digital signal lines from electrostatic discharge and transient voltage spikes. Housed in a compact X2-DFN surface mount package, this device features a peak pulse power dissipation of 0.3 W and maintains high reliability over a broad temperature range from -55°C to 150°C.
The diode configuration is single and bi-directional, making it suitable for robust suppression in both directions. It delivers a minimum breakdown voltage of 10 volts with a maximum reverse standoff voltage of 9.5 volts, allowing it to effectively clamp voltages up to 20 volts during transient events. The device supports a peak pulse current of up to 16 A for short durations, ensuring protection against high transient surges.
With a height of only 0.35 mm and a small footprint of 1 mm length by 0.6 mm width, the X2-DFN package is ideal for space-constrained environments. The product meets the automotive industry standard AEC-Q101, confirming its reliability for automotive and other demanding industrial applications.
This ESD Protection Diode is widely used in automotive electronics, industrial control systems, and other sensitive equipment requiring high assurance against electrostatic damage and voltage transients. It helps extend product lifespan by preventing failure caused by electrostatic discharge.
Single, bi-directional diode configuration for effective transient suppression. Surface mount package type X2-DFN offering compact footprint and low profile. Peak pulse power dissipation of 0.3 W supports robust transient voltage protection.
Wide operating temperature range from -55°C to 150°C for versatile application. Compliant with automotive AEC-Q101 standard for enhanced reliability. Low maximum reverse leakage current of 1 µA minimizing power consumption.
High peak pulse current capacity of 16 A for transient surge handling. Compact dimensions ideal for space-limited circuit designs.
Choose the onsemi SZESD7410N2T5G for reliable transient voltage and ESD protection in automotive, industrial, and electronic equipment designs. Browse the Electronics & Electricals category at EnvMart for more high-quality semiconductor protection components.
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Frequently Asked Questions
The peak pulse power dissipation of the onsemi SZESD7410N2T5G is 0.3 W.
This model operates reliably between -55°C and 150°C.
The clamping voltage of this ESD protection diode is 20 V.
The maximum peak pulse current for this diode is 16 A.
The dimensions of the X2-DFN package are 1 mm in length, 0.6 mm in width, and 0.35 mm in height.
This diode complies with the automotive AEC-Q101 standard for quality assurance.
The maximum reverse leakage current for the SZESD7410N2T5G is 1 µA.
It uses a single, bi-directional diode configuration for effective transient suppression.
The minimum breakdown voltage is 10 V.
This diode has 1 element per chip.
The maximum reverse stand-off voltage is 9.5 V.
This ESD protection diode is suitable for automotive electronics, industrial control systems, and other sensitive equipment requiring protection against electrostatic discharge and voltage transients.
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