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onsemi Transistor, 500 mA NPN, 300 V, 3-Pin DPAK, Surface Mount, TO-252 Package MJD340T4G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 10.41mm
Model MJD340T4G
Width 6.73mm
Mount Type Surface
Series MJD340
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 3V
Maximum Collector Base Voltage VCBO 300V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.56W
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 10MHz

Key Features

  • Supports a maximum power dissipation of 1.56 watts for efficient thermal management.
  • Operates from -65°C to 150°C, suitable for diverse industrial environments.
  • Surface mount design facilitates integration into modern PCB assemblies.
  • Features a minimum DC current gain (hFE) of 30 for reliable amplification.
  • Automotive-grade AEC-Q101 standard qualifies it for automotive applications.
  • Maximum transition frequency of 10 MHz ensures high-speed switching capability.

Product Description

The onsemi MJD340T4G is a high-voltage, NPN bipolar transistor designed for power switching and amplification in electronic circuits. With a maximum DC collector current of 500 mA and collector emitter voltage up to 300 V, it is ideal for industrial, automotive, and power management applications requiring robust performance.

Manufactured with a TO-252 package and surface mount design, the transistor enables compact PCB layouts while maintaining excellent thermal characteristics, supported by its maximum power dissipation of 1.56 W. The device operates effectively across a broad temperature range from -65°C to 150°C, ensuring reliability in harsh environments.

Featuring a transistor configuration of single NPN polarity and a minimum current gain of 30, the MJD340T4G transistor supports efficient signal amplification and switching. Its 3-pin design and compact physical dimensions (10.41 mm length, 6.73 mm width, 2.38 mm height) allow easy incorporation in various electronic assemblies.

This transistor meets the automotive AEC-Q101 standard, making it suitable for automotive system applications requiring stringent quality and reliability standards. Supports maximum collector current of 500 mA. Collector emitter voltage rating of 300 V and collector base voltage of 300 V.

Power dissipation capacity up to 1.56 W. Operational in extreme temperature ranges from -65°C to 150°C. Compact TO-252 package with surface mount capability. Meets AEC-Q101 automotive qualification standards.

This product is widely used in industrial electronics, power management circuits, automotive systems, and other semiconductor applications requiring high voltage and moderate power switching. Explore more high-quality transistors and semiconductor components with EnvMart for your manufacturing and repair needs.

Explore more products in our Bipolar Transistors category.

onsemi Transistor, 500 mA NPN, 300 V, 3-Pin DPAK, Surface Mount, TO-252 Package MJD340T4G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 500 mA.

The collector-emitter voltage rating is up to 300 V, and the collector-base voltage is also rated at 300 V.

It supports a maximum power dissipation of 1.56 watts.

This transistor operates effectively across a temperature range from -65°C to 150°C.

The minimum DC current gain (hFE) is 30.

It is packaged in a TO-252 package with a surface mount design.

The maximum transition frequency is 10 MHz, allowing for high-speed switching capabilities.

Yes, it meets the automotive AEC-Q101 standard, qualifying it for automotive applications.

The dimensions are 10.41 mm in length, 6.73 mm in width, and 2.38 mm in height.

It has a total of 3 pins.

The configuration is a single NPN polarity transistor.

The country of origin is India.

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