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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF4905PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 74A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Infineon IRF4905PBF is a high-performance HEXFET Type P-Channel MOSFET designed for demanding electronic power management applications. It features a maximum continuous drain current of 74 A and a maximum drain-source voltage of 55 V, providing robust power handling capabilities essential for industrial and commercial electronics.
The device utilizes the enhancement mode channel for precise and efficient switching and is packaged in a TO-220AB form factor, facilitating excellent thermal dissipation and ease of installation in through-hole designs.
This MOSFET offers a low on-resistance of 20 milliohms, minimizing conduction losses and enhancing overall circuit efficiency, especially critical in high-current scenarios. It supports a maximum power dissipation of 200 W and can reliably operate in temperature ranges from -55°C to +175°C, making it suitable for rigorous industrial environments.
The typical gate charge of 180 nC ensures smooth gate control, while the wide permissible gate-source voltage of -20 V to +20 V offers flexibility in design. Forward voltage is -1.6 V, supporting efficient device operation.
Common applications include DC-DC converters for power conversion, motor control circuits requiring substantial current management, power supply units, and industrial automation systems demanding dependable switching components. Its thermal and electrical performance supports use in high-load and harsh environmental conditions.
Delivers high continuous drain current capability of 74 A for demanding power applications. Maximum drain-source voltage rating of 55 V ensures effective power handling. Low drain-source resistance of 20 milliohms reduces power losses and improves efficiency.
Uses enhancement mode operation for precise and reliable switching. Compact TO-220AB package enables efficient heat dissipation and through-hole mounting. Supports maximum power dissipation up to 200 W for robust performance.
Operating temperature range from -55°C up to 175°C for harsh environments. Typical gate charge of 180 nC helps in efficient gate drive control. Wide gate-source voltage tolerance of -20 V to +20 V for flexibility in circuits.
Ideal for applications including DC-DC converters, motor control, power supplies, and automation systems.
This Infineon MOSFET IRF4905PBF is an excellent choice for industrial, laboratory, construction, HVAC, manufacturing, power electronics, and automation sectors where reliable and efficient semiconductor switching is critical. Explore more high-quality semiconductors and power management solutions at EnvMart.
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