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Infineon HEXFET Type P-Channel MOSFET, 74 A Maximum Continuous Drain Current, 55 V Maximum Drain Source Voltage IRF4905PBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 8.77mm
Length 10.54mm
Model IRF4905PBF
Width 4.69mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 74A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 20mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 200W
Typical Gate Charge Qg @ Vgs 180nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.6V
IRF4905, P-Channel MOSFET Transistor 74A 55V, 3-Pin TO-220ABBrand International Rectifier

Key Features

  • Supports high power applications with a maximum power dissipation of 200 W.
  • Features low drain-source resistance of 20 milliohms for improved energy efficiency.
  • Operates reliably in temperatures ranging from -55°C to 175°C for demanding environments.
  • Designed as an enhancement mode MOSFET for precise electronic control.
  • Utilizes TO-220AB package enabling easy mounting and superior heat dissipation.
  • Typical gate charge of 180 nC allows efficient switching performance.
  • Maximum gate-source voltage rating of ±20 V ensures robust operation.
  • Commonly used in DC-DC converters, motor controls, power supplies, automation, and thermal management.

Product Description

Infineon IRF4905PBF is a HEXFET Type P-Channel MOSFET designed for industrial electronics applications requiring high current capacity and efficient power handling. It supports a maximum continuous drain current of 74 A and a maximum drain-source voltage of 55 V, making it suitable for heavy-duty power management tasks. The device is housed in a 3-Pin TO-220AB package which facilitates through-hole mounting and excellent heat dissipation, critical for maintaining performance in industrial, automation, and motor control systems.

This enhancement mode MOSFET features a low on-resistance (20 mΩ) which reduces power losses and improves overall circuit efficiency. It operates reliably within a broad temperature range from -55°C to +175°C, making it ideal for demanding environments with thermal challenges. Its typical gate charge of 180 nC and maximum gate-source voltage rating of ±20 V provide responsive switching characteristics and robust electrical performance.

The IRF4905PBF finds extensive applications in DC-DC converters for power conversion, motor control systems requiring substantial current management, power supply regulation, and industrial automation solutions. Its robust build quality and electrical specs ensure dependable operation in high-load scenarios where efficiency and thermal management are crucial.

High continuous drain current supports power-demanding industrial electronics. Low on-resistance optimizes power efficiency and thermal performance. Enhanced MOSFET operation allows precise electronic control of power switching.

TO-220AB package aids in mounting convenience and heat dissipation. Wide operating temperature range enhances reliability in harsh environments. Suitable for use in motor control, power supplies, and automation systems. Typical gate charge and gate-source voltage ratings contribute to effective switching.

Discover advanced semiconductor and MOSFET products at EnvMart to enhance your electronic assemblies and industrial projects.

Infineon HEXFET Type P-Channel MOSFET, 74 A Maximum Continuous Drain Current, 55 V Maximum Drain Source Voltage IRF4905PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 74 A.

It has a maximum drain-source voltage rating of 55 V.

The IRF4905PBF is housed in a TO-220 package type, which allows for through-hole mounting.

The typical gate charge is 180 nC, which aids in efficient switching performance.

The maximum power dissipation is rated at 200 W.

It operates reliably in a temperature range from -55°C to +175°C.

The maximum gate-source voltage rating is ±20 V.

The maximum drain-source resistance is 20 mΩ, which helps improve energy efficiency.

This model has a pin count of 3.

It is commonly used in DC-DC converters, motor controls, power supplies, automation, and thermal management.

The IRF4905PBF is a Type P channel MOSFET designed for enhancement mode operation.

The dimensions are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.

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