ROHM P-Channel MOSFET 3 A 12 V Enhancement Type, Surface Mount, 3-Pin SC-96 Package RQ5A030AP

ROHM RQ5A030AP is a high-quality P-Channel MOSFET designed as an enhancement mode transistor suitable for power switching in various electronic applications. With a surface mount SC-96 3-pin package, it offers compactness and ease of PCB integration.

This transistor supports a maximum continuous drain current of 3 A and a maximum drain-source voltage of 12 V, making it effective for moderate current switching tasks. The device features a low maximum drain-source resistance of 180 mΩ, which ensures efficient conduction and minimal power loss.

Designed to operate reliably in demanding environments, the MOSFET handles temperatures from -55°C up to 150°C. Its typical gate charge of 16 nC facilitates fast switching speeds, enabling higher efficiency in power management circuits. The maximum power dissipation rating is 1 W, making it suitable for low power applications.

The compact dimensions of approximately 3 mm length, 1.8 mm width, and 950 µm height help in designing compact electronic assemblies. With a maximum gate-source voltage of -8 V and a forward voltage around -1.2 V, it meets the necessary electrical specifications for stable operation.

This transistor is ideal for use in industrial, consumer electronics, and power management circuits requiring efficient, reliable switching components. Typical use cases include voltage regulation, load switching, and signal amplification in surface mount technology (SMT) environments.

Type P channel transistor suitable for enhancement mode applications. Maximum continuous drain current of 3 amperes for handling moderate loads. Surface mount package type SC-96 with 3 pins for compact circuit designs. Low maximum drain-source resistance of 180 milliohms reduces power loss.

Operating temperature range from -55°C to 150°C allows for robust performance in harsh environments. Typical gate charge of 16 nanoCoulombs enabling fast switching. Maximum power dissipation of 1 watt supports low power circuits.

Dimensions approximately 3 mm length, 1.8 mm width, and 950 µm height for space-saving placement. Forward voltage drop approximately -1.2 V. Maximum gate-source voltage rating of -8 V for safe gate control. Explore more semiconductor components and MOSFET devices on EnvMart for your industrial and electronic design needs.