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STMicroelectronics STripFET II N-Channel MOSFET 60 A 60 V Enhancement 3-Pin TO-220 STP60NF06L
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP60NF06L |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 14mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | -15, +15V |
| Forward Voltage Vf | 1.3V |
Key Features
- Designed with STripFET II technology for ultra-low on-resistance and gate charge.
- Enhancement mode channel with 3-pin through-hole mounting.
- Maximum continuous drain current of 60 amperes for high power applications.
- Maximum drain-source voltage rating of 60 volts ensuring robust performance.
- Features 14 milliohm maximum drain-source resistance for efficient conduction.
- Supports up to 110 watts maximum power dissipation at operating temperatures up to 175°C.
- Operating temperature range from -65°C to 175°C for varied industrial uses.
- Typical gate charge is 35 nanocoulombs at gate-source voltage of 35 V.
Product Description
STMicroelectronics STP60NF06L is a N-Channel MOSFET transistor engineered with STripFET II technology. It offers a low gate charge combined with low on-resistance, making it suitable for high-efficiency power switching.
This device is housed in a 3-pin TO-220 package designed for through-hole mounting, ensuring easy integration into power supply circuits and motor control applications. It supports a maximum continuous drain current of 60 A and a drain-source voltage of 60 V, delivering robust performance in demanding industrial environments.
The MOSFET features a maximum drain-source resistance (Rds) of 14 milliohms, resulting in minimal conduction losses. It can dissipate up to 110 W of power and operates in temperatures ranging from -65°C to 175°C, suitable for industrial, automotive, and power management applications.
Additional technical details include a typical gate charge of 35 nC at a gate-source voltage of 35 V, maximum gate-source voltage of -15 V to +15 V, and a forward voltage of 1.3 V. The compact dimensions of 10.4 mm length, 9.15 mm height, and 4.6 mm width allow flexible PCB design options.
Designed with STripFET II technology for ultra-low gate charge and low on-resistance. Supports high drain current and voltage ratings for power electronics applications. Through-hole TO-220 package for ease of mounting and heat dissipation.
Robust operating temperature range ensuring reliability in harsh environments. Compact form factor facilitates integration in dense circuit designs. Typical gate charge and low forward voltage for efficient switching performance.
Suitable for industrial automation and power conversion systems.
This MOSFET is ideal for applications requiring efficient power switching, including power supplies, motor drives, and load drivers in the electronics and electrical equipment sectors. STMicroelectronics ensures quality and performance through stringent manufacturing standards.
Explore advanced components like the STP60NF06L MOSFET in the Electronics & Electricals category on EnvMart for reliable and high-performance semiconductor devices.
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Frequently Asked Questions
The STMicroelectronics STP60NF06L MOSFET supports a maximum continuous drain current of 60 amperes.
This model has a maximum drain-source voltage rating of 60 volts, ensuring robust performance in various applications.
The typical gate charge is 35 nanocoulombs at a gate-source voltage of 35 V.
The dimensions of the TO-220 package are 10.4 mm in length, 9.15 mm in height, and 4.6 mm in width.
It can dissipate up to 110 watts of power, making it suitable for high-power applications.
The operating temperature range is from -65°C to 175°C, allowing for varied industrial uses.
The maximum drain-source resistance (Rds) is 14 milliohms, which contributes to efficient conduction.
This model features a through-hole mounting type, which facilitates easy integration into power supply circuits.
The maximum gate-source voltage for this MOSFET is -15 V to +15 V.
This MOSFET is suitable for applications requiring efficient power switching, including power supplies, motor drives, and load drivers.
The forward voltage is specified at 1.3 volts.
The STP60NF06L belongs to the STripFET II series, which is designed for ultra-low on-resistance and gate charge.
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