STMicroelectronics STripFET H7 Type N-Channel MOSFET, 80 A, 100 V Enhancement Mode, 3-Pin TO-263 STB100N10F7

The STMicroelectronics STB100N10F7 is an N-Channel STripFET H7 MOSFET designed for high-performance power switching applications. Housed in a TO-263 package with three pins, it operates with an enhancement channel mode that enables efficient switching and low conduction losses.

This MOSFET features a maximum continuous drain current (Id) of 80 amperes and a maximum drain-source voltage (Vds) of 100 volts, making it suitable for power management in industrial electronics, motor control, power supplies, and automotive applications where high current and voltage ratings are required.

Its ultra-low drain-source resistance (Rds(on)) of 8 milliohms reduces power dissipation and enhances energy efficiency. The device is capable of dissipating up to 150 watts of power, allowing operation under demanding thermal conditions.

Designed for surface mounting, the TO-263 package measures 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height, facilitating integration into compact PCB layouts.

With an operating temperature range from -55°C to 175°C, this MOSFET can function reliably under harsh environmental conditions. The typical gate charge of 61 nC at Vgs ensures fast switching speeds while requiring minimal gate drive power. It also supports a maximum gate-source voltage of 20 V, guarding against gate damage from voltage spikes.

The forward voltage drop of 1.2 V contributes to its high efficiency in conduction mode.

This product is well-suited for applications in industrial equipment, power converters, automotive electronics, and other demanding environments requiring robust power switching components.

Type N channel with enhancement mode operation for reliable switching. Maximum continuous drain current of 80 A suitable for power electronics. Low on-resistance of 8 milliohms reduces conduction losses. Maximum power dissipation rating of 150 W ensures robust thermal handling.

Compact TO-263 surface mount package with 3 pins for easy PCB integration. Wide operating temperature range from −55°C to 175°C for harsh environments. Typical gate charge of 61 nC enables efficient gate driving. Maximum gate-source voltage of ±20 V protects against voltage spikes.

Forward voltage of 1.2 V supports efficient conduction in circuits. Dimensions: length 10.4 mm, width 9.35 mm, height 4.6 mm. Explore more industrial-grade MOSFETs and semiconductor components at EnvMart for your electronic design and manufacturing needs.