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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 3 A 900 V Enhancement 3-Pin TO-220 STP3NK90Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP3NK90Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 4.8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 22.7nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET features a continuous drain current of 3 A.
- It supports a maximum drain source voltage of 900 V for high-voltage applications.
- Packaged in a durable 3-pin TO-220 through-hole mount type.
- Channel mode is enhancement type, suitable for switching applications.
- Maximum power dissipation is rated at 90 W for thermal reliability.
- Gate source voltage range is -30 V to +30 V ensuring robust control.
- Operating temperature ranges from -55°C to 150°C for diverse environments.
- Typical gate charge is 22.7 nC measured at specified gate voltage.
Product Description
STMicroelectronics STP3NK90Z is an N-Channel MDmesh SuperMESH MOSFET designed for efficient power switching and amplification in industrial and electronic applications. It supports a continuous drain current of 3 A and a maximum drain source voltage of 900 V, suitable for medium to high-voltage circuits. This device follows an enhancement channel mode and is equipped with a 3-pin TO-220 package for reliable through-hole mounting.
The MOSFET offers a maximum power dissipation of 90 W, enabling stable operation under demanding thermal conditions. Its gate source voltage range (-30 V to +30 V) provides robust control for switching operations. The device dimensions are compact, with a length of 10.4 mm, width of 4.6 mm, and height of 9.15 mm, making it suitable for space-constrained circuit designs.
Operating temperature ranges from -55°C to 150°C allow usage in a wide variety of industrial and commercial environments including power management systems, motor control, and energy conversion. The low drain source resistance (4.8 Ω) reduces conduction losses, enhancing overall circuit efficiency, while the typical gate charge of 22.7 nC ensures fast switching performance.
This MOSFET provides a reliable and effective solution for power electronic designs requiring high voltage tolerance and current carrying capability. It is ideal for industrial automation, power supplies, and motor drive systems.
This MOSFET features a continuous drain current of 3 A. It supports a maximum drain source voltage of 900 V for high-voltage applications. Packaged in a durable 3-pin TO-220 through-hole mount type. Channel mode is enhancement type, suitable for switching applications.
Maximum power dissipation is rated at 90 W for thermal reliability. Gate source voltage range is -30 V to +30 V ensuring robust control. Compact dimensions: length 10.4 mm, width 4.6 mm, height 9.15 mm. Operating temperature ranges from -55°C to 150°C for diverse environments.
Typical gate charge is 22.7 nC measured at specified gate voltage. Provides low drain source resistance of 4.8 Ω to minimize conduction losses. Explore our semiconductor category to find complementary components for your electronic projects and industrial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3 A.
It supports a maximum drain source voltage of 900 V, suitable for high-voltage applications.
This MOSFET is packaged in a 3-pin TO-220 through-hole mount type.
The operating temperature ranges from -55°C to 150°C, allowing use in diverse environments.
The maximum power dissipation is rated at 90 W, ensuring thermal reliability during operation.
The typical gate charge is 22.7 nC, measured at the specified gate voltage.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
The gate source voltage range is from -30 V to +30 V, providing robust control for switching applications.
It uses an enhancement type channel, which is suitable for switching applications.
The maximum drain source resistance is 4.8 Ω, which helps reduce conduction losses.
The country of origin for this MOSFET is India.
This MOSFET belongs to the MDmesh and SuperMESH series.
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