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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 40A 600V Enhancement 4-Pin ISOTOP STE40NC60
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.1mm |
| Length | 38.2mm |
| Model | STE40NC60 |
| Width | 25.5mm |
| Mount Type | Panel |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | ISOTOP |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 460W |
| Typical Gate Charge Qg @ Vgs | 307.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.3V |
Key Features
- The device features an enhancement mode channel for efficient switching.
- Maximum drain-source resistance Rds is 130 milliohms, ensuring low conduction losses.
- Typical gate charge at Vgs is 307.5 nanocoulombs for optimal gate drive performance.
- Maximum power dissipation rating is 460 watts, suitable for high power applications.
- Operating temperature ranges from -65°C to 150°C for wide environmental use.
- Mount type is panel mounting with 4 pins for secure installation.
- Forward voltage drop is 1.3 volts under typical conditions.
- Package dimensions are length 38.2mm, width 25.5mm, and height 9.1mm.
Product Description
STMicroelectronics STE40NC60 is a MDmesh™ SuperMESH™ N-Channel MOSFET offering a maximum continuous drain current of 40A and a maximum drain-source voltage of 600V. Packaged in a 4-pin ISOTOP enclosure, it features an enhancement-mode channel with high efficiency and rugged build quality designed for use in industrial, power management, automotive, and electronic applications.
This MOSFET is capable of handling high power dissipation up to 460 watts and operating across a wide temperature range from -65°C to 150°C, ensuring reliable performance in harsh environments. The device's low drain-source resistance of 130 milliohms reduces conduction losses, optimizing system efficiency and thermal management.
The typical gate charge of 307.5 nanocoulombs and the broad gate-source voltage range (-30V to +30V) enable effective and precise switching control. Its compact package size of 38.2mm length, 25.5mm width, and 9.1mm height facilitates easy panel mounting and integration into existing designs.
Applications include power converters, motor drives, industrial controls, and other demanding semiconductor uses seeking a robust and efficient MOSFET solution. This product does not carry automotive certifications but adheres to industry standards for discrete semiconductors.
The device features an enhancement mode channel for efficient switching. Maximum drain-source resistance Rds is 130 milliohms, ensuring low conduction losses. Typical gate charge at Vgs is 307.5 nanocoulombs for optimal gate drive performance.
Maximum power dissipation rating is 460 watts, suitable for high power applications. Operating temperature ranges from -65°C to 150°C for wide environmental use. Mount type is panel mounting with 4 pins for secure installation.
Forward voltage drop is 1.3 volts under typical conditions. Package dimensions are length 38.2mm, width 25.5mm, and height 9.1mm. The gate-source voltage range extends from -30V to +30V to withstand control voltages.
This STMicroelectronics MDmesh SuperMESH MOSFET delivers reliable performance for industrial, laboratory, and power electronic applications. Explore more high-quality semiconductor components and electronic devices at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of the STE40NC60 is 40A.
This model can handle a maximum drain-source voltage of 600V.
The maximum power dissipation rating of this MOSFET is 460 watts.
The typical gate charge at Vgs for this model is 307.5 nanocoulombs.
The operating temperature range for this MOSFET is from -65°C to 150°C.
The maximum drain-source resistance (Rds) is 130 milliohms, which helps reduce conduction losses.
The package dimensions are 38.2mm in length, 25.5mm in width, and 9.1mm in height.
This model uses panel mounting with a 4-pin configuration for secure installation.
The forward voltage drop under typical conditions is 1.3 volts.
The maximum gate-source voltage range is from -30V to +30V.
This MOSFET is suitable for applications such as power converters, motor drives, and industrial controls.
This model belongs to the MDmesh and SuperMESH series by STMicroelectronics.
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