STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 13A 600V Enhancement 3-Pin TO-220 STP13NK60Z

STMicroelectronics STP13NK60Z is an industrial-grade N-Channel MDmesh SuperMESH MOSFET designed for power switching applications. It provides a maximum continuous drain current of 13 A and a drain-source voltage rating of 600 V, making it suitable for high voltage and current load scenarios. The device is housed in a TO-220 3-pin through-hole package, allowing for secure mounting and effective heat dissipation.

Its enhancement mode channel offers efficient control in electronic circuits such as power supplies, motor drives, and inverters. With a maximum power dissipation of 150 W, it supports rigorous operating conditions.

The typical gate charge of 66 nC at the gate-source voltage ensures quick switching capabilities, enhancing overall device speed and reducing switching losses. The low on-resistance of 550 mΩ helps minimize conduction losses and heat generation.

The MOSFET operates reliably over a wide temperature range from -55°C to 150°C, accommodating various industrial environments. Its physical dimensions are compact with a length of 10.4 mm, width of 4.6 mm, and height of 9.15 mm, providing versatile design options.

Additional electrical characteristics include a gate-source voltage tolerance between -30 V and +30 V and a forward voltage of 1.5 V. These parameters ensure safe and efficient device operation under typical power electronics workloads.

Common industrial use cases for the STP13NK60Z include power management in consumer electronics, industrial machinery control, automotive electronics, and general discrete semiconductor applications.

The device complies with standard semiconductor quality and performance expectations, although no specific approvals or automotive certifications are listed. Designed for enhancement mode operation to deliver reliable switching performance.

Features a maximum power dissipation of 150 W for robust thermal handling. Has a typical gate charge of 66 nC at Vgs, supporting efficient gate drive. Equipped with a low maximum drain-source resistance of 550 mΩ for reduced conduction losses.

Operates within a temperature range from -55°C to 150°C for wide environmental tolerance. Compact dimensions include length 10.4 mm, width 4.6 mm, and height 9.15 mm. Supports through hole mount, facilitating easy PCB integration.

Includes maximum gate-source voltage ratings of -30 V to +30 V. Forward voltage is rated at 1.5 V for optimized electrical characteristics. Explore more industrial, electronic components and semiconductor solutions on EnvMart.