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Vishay Silicon Junction Switching Diode, Single 150 mA 100 V 2-Pin Quadro Melf LS4448GS08

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Vishay Silicon Junction Switching Diode, Single 150 mA 100 V 2-Pin Quadro Melf LS4448GS08

Name: Vishay Silicon Junction Switching Diode, Single 150 mA 100 V 2-Pin Quadro Melf LS4448GS08
Brand: Vishay
SKU: 185856
Price: 0.04 USD
Availability: InStock

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Category Discrete Semiconductor Brand Vishay Condition New

Specifications

Country of Origin	India
Diameter	1.6mm
Brand	Vishay
Height	1.5mm
Length	3.5mm
Model	LS4448GS08
Width	1.7mm
Mount Type	Surface
Series	LS 4448
Maximum Operating Temperature	175°C
Case	DO-204AL, molded epoxy over glass body
Package Type	Quadro Melf
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Polarity	Color band denotes cathode end
Terminals	Matte tin plated leads, solderable per
Pin Count	2
Maximum Power Dissipation Pd	500mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	2A
Maximum Forward Voltage Vf	1V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	150mA
Maximum Peak Reverse Repetitive Voltage Vrrm	100V

Key Features

Superectifier structure provides high reliability and robust performance.
Glass passivated junction ensures minimal leakage current under typical operation.
Fast switching capability with a peak reverse recovery time of 4 nanoseconds.
Low leakage current typically less than 0.2 microamps.
High forward surge current tolerance up to 2 A.
Compact package size with dimensions approx. 3.5 mm length, 1.7 mm width, and 1.5 mm height.
Molded epoxy DO-204AL case with matte tin plated solderable leads.
Operating temperature range from -65°C up to 175°C for industrial robustness.

Product Description

Vishay LS4448GS08 is a Silicon Junction Switching Diode designed for high efficiency and reliability. With a maximum forward current of 150 mA and a peak reverse voltage rating of 100 V, this diode is well-suited for use in Discrete Semiconductor applications requiring fast switching and low leakage currents.

Constructed with a superectifier structure, it offers high reliability with a cavity-free, glass-passivated junction design that minimizes leakage to typically below 0.2 microamps. The fast switching speed of 4 nanoseconds peak reverse recovery enhances its performance in high-frequency circuits.

The diode is housed in a DO-204AL molded epoxy package with matte tin plated leads that meet solderability standards per J-STD-002 and JESD 22-B102, making it ideal for surface mount technology assembly.

Its robust mechanical design and wide operating temperature range from -65°C to 175°C support industrial, electronic component, and semiconductor applications including high voltage rectification, snubber circuit integration, and grid CRT or TV applications.

Superectifier structure for high reliability. Cavity-free glass passivated junction for low leakage. Fast switching with 4 ns peak reverse recovery time. Low leakage current typically under 0.2 µA. High forward surge capability up to 2 A.

Compact dimensions: 3.5 mm length, 1.7 mm width, 1.5 mm height. Molded epoxy DO-204AL case with matte tin plated solderable leads. Operating temperature from -65°C to 175°C. Color band denotes cathode end polarity.

This diode finds typical applications in high voltage rectification of G2 grid CRTs, TV sets, and as snubber circuits for camera flashes. It is compliant with RoHS standards and suitable for various industrial and electronic semiconductor uses.

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