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Infineon N-Channel MOSFET Surface Mount SuperSO8 5x6 Package 381A Drain Current, 40V Drain Source Voltage BSC0504NSIATMA1

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Infineon N-Channel MOSFET Surface Mount SuperSO8 5x6 Package 381A Drain Current, 40V Drain Source Voltage BSC0504NSIATMA1

Name: Infineon N-Channel MOSFET Surface Mount SuperSO8 5x6 Package 381A Drain Current, 40V Drain Source Voltage BSC0504NSIATMA1
Brand: Infineon
SKU: 179065
Price: 0.54 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	BSC0504NSIATMA1
Mount Type	Surface
Series	BSC
Maximum Operating Temperature	+150°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	381A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.7mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Provides a maximum continuous drain current of 381A ensuring high power handling.
Operates with a maximum drain-source voltage of 40V suitable for robust circuit design.
Features a low 0.7mΩ Rds(on) for minimal conduction losses and improved efficiency.
Supports a maximum power dissipation of 81W for reliable performance under heavy load.
The SuperSO8 5 x 6 package allows compact surface mounting in demanding layouts.
Typical gate charge of 80nC offers consistent and predictable switching behavior.
Designed to operate in temperature ranges from -55°C to +150°C for enhanced durability.
Gate-source voltage tolerance up to ±20V provides robust drive margins.

Product Description

Infineon BSC0504NSIATMA1 is a high-current N-Channel MOSFET tailored for low-voltage switching in power electronics applications. This transistor features a maximum continuous drain current of 381A and a maximum drain-source voltage rating of 40V, making it well-suited for efficient power management in industrial, server, and automotive electronics.

Its compact SuperSO8 5 x 6 surface mount package enables integration in dense circuit designs while offering superior thermal performance. The device boasts a low on-resistance of 0.7mΩ, minimizing conduction losses and improving overall system efficiency. It supports a maximum power dissipation rating of 81W, allowing it to handle demanding load conditions reliably.

The typical gate charge of 80nC ensures predictable switching speeds, critical for optimizing power conversion efficiency. Additionally, the device tolerates gate-source voltages up to ±20V, providing robust operational safety margins. The MOSFET functions effectively over an extended temperature range from -55°C to +150°C, suitable for harsh operating environments.

It is compliant with RoHS directives, ensuring environmentally responsible manufacturing standards. Typical use cases include DC-DC converter stages, synchronous rectification applications in power supplies, high-current motor drives, and server power distribution systems.

Maximum continuous drain current of 381A for high power performance. 40V maximum drain-source voltage suitable for low voltage switching. Low Rds(on) of 0.7mΩ reduces conduction losses. 81W power dissipation supports heavy duty operation.

SuperSO8 5 x 6 surface mount package. Typical gate charge of 80nC for efficient switching. Wide operating temperature range from -55°C to +150°C. Gate-source voltage tolerance ±20V for reliable drive margins. RoHS compliant for environmental safety.

Ideal for DC-DC converters, synchronous rectifiers, motor drives, and server power modules. Explore more MOSFETs and discrete semiconductors within EnvMart's Electronics & Electricals category for high-quality, industry-standard power management solutions.