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Infineon iPB Type P-Channel MOSFET, 273A Continuous Drain Current, 100V Drain-Source Voltage, TO-263 Package IPB110P06LMATMA1

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Infineon iPB Type P-Channel MOSFET, 273A Continuous Drain Current, 100V Drain-Source Voltage, TO-263 Package IPB110P06LMATMA1

Name: Infineon iPB Type P-Channel MOSFET, 273A Continuous Drain Current, 100V Drain-Source Voltage, TO-263 Package IPB110P06LMATMA1
Brand: Infineon
SKU: 179027
Price: 3.29 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPB110P06LMATMA1
Mount Type	Surface
Series	iPB
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	273A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	1.7mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

Supports a maximum continuous drain current of 273A for heavy load applications.
Drain-source voltage rating of 100V suitable for high-voltage circuits.
Low on-resistance of 1.7mΩ reduces conduction losses effectively.
Maximum power dissipation of 81W ensures robust thermal performance.
Typical gate charge of 80nC allows responsive switching behavior.
Operates over a wide temperature range from -55°C to 175°C for versatile conditions.
3-pin TO-263 package facilitates surface mounting in compact designs.
Conforms to RoHS standards minimizing hazardous substances.

Product Description

Infineon IPB110P06LMATMA1 is a P-Channel MOSFET designed for high-current and high-voltage applications. It features a maximum continuous drain current of 273A and a maximum drain-source voltage of 100V supplied in a compact TO-263 surface-mount package suitable for efficient power conversion and switching.

This MOSFET offers very low on-resistance of 1.7 milliohms, thereby reducing conduction losses and enhancing efficiency in power circuits. Its robust thermal capacity of 81W maximum power dissipation allows reliable operation under demanding thermal conditions, supported by a typical gate charge of 80 nanocoulombs which enables quick and responsive switching performance.

The operating temperature range from -55°C to 175°C ensures the device can function reliably in both cold-start and high-temperature industrial environments. The 3-pin TO-263 package facilitates compact and surface-mounted designs, making it ideal for space-constrained power modules.

Applications include synchronous rectification in power supplies, high-current motor drive downstream stages, high-voltage DC-DC converter switches, and fast switching in transient load environments. The device requires careful gate-source voltage control (±20V max) to avoid damage and appropriate PCB thermal pads and heat sinking for managing thermal dissipation.

High continuous drain current capacity for heavy load handling. Low drain-source resistance to minimize power loss. Wide temperature operation range suitable for diverse environments. Compact TO-263 surface mount package ideal for module integration.

RoHS compliant for reduced environmental impact. Enables efficient synchronous rectification and DC-DC switching. Optimized for motor drive and power supply applications.

Infineon brand products are renowned in semiconductor solutions for industrial and commercial usage. Explore related MOSFETs and power devices to suit various electronic design needs at EnvMart.