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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA029N06NXKSA1 |
| Mount Type | Surface |
| Series | IPA |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 84A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Channel Mode | P |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon IPA029N06NXKSA1 is a N-Channel Power MOSFET in a TO-220 3-pin surface mount package designed for high efficiency power management and switching applications. It supports a maximum continuous drain current of 84 A and a drain-source voltage of 40 V, making it ideal for demanding industrial use.
This MOSFET offers excellent performance with a low drain-source resistance of 2.9 mΩ to reduce conduction losses and improve overall efficiency. It supports a maximum power dissipation of 81 W, enabling reliable operation under high load conditions and elevated temperatures from -55°C up to 175°C.
The device’s fast switching capability is facilitated by a typical gate charge of 80 nC at 8 V gate voltage, which helps optimize switching speed and reduce power dissipation in electronic circuits. Its maximum gate-source voltage rating of 20 V safeguards the transistor from excessive voltages at the gate terminal.
Applications include motor control systems, solar micro-inverters, fast switching DC-DC converters, and other industrial electronics requiring robust and efficient switching components. Through-hole mounting technology simplifies installation and repair while enabling strong mechanical support.
High continuous drain current rating of 84 A suitable for heavy loads. Maximum drain-source voltage of 40 V ensuring reliable operation in power circuits. TO-220 3-pin package compatible with surface mount technology. Maximum power dissipation of 81 W to handle high power applications.
Operating temperature range from -55°C to 175°C for industrial environments. Low drain-source resistance of 2.9 mΩ to minimize power losses. Typical gate charge of 80 nC enabling fast switching. Maximum gate-source voltage rating of ±20 V protecting the gate from voltage spikes.
Forward voltage drop of 1.2 V for efficient conduction. RoHS compliant ensuring environmental safety.
This product is optimized for multiple industrial applications such as industrial motor controllers, solar power systems, power supply units, and DC-DC converters. It is engineered to ensure system cost reduction, high power density, and reduced voltage overshoot for robust and scalable electronic designs.
Browse more semiconductor components and power MOSFETs at EnvMart to find compatible solutions for your electronics projects and industrial deployments.
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