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Infineon N-Channel Power MOSFET, 84 A Drain Current, 40 V Drain Source Voltage, TO-220 3-Pin Surface Mount IPA029N06NXKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPA029N06NXKSA1
Mount Type Surface
Series IPA
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 84A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 2.9mΩ
Channel Mode P
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • High continuous drain current rating of 84 A suitable for heavy loads.
  • Maximum drain-source voltage of 40 V ensuring reliable operation in power circuits.
  • TO-220 3-pin package compatible with surface mount technology.
  • Maximum power dissipation of 81 W to handle high power applications.
  • Operating temperature range from -55°C to 175°C for industrial environments.
  • Low drain-source resistance of 2.9 mΩ to minimize power losses.
  • Typical gate charge of 80 nC enabling fast switching.
  • Maximum gate-source voltage rating of ±20 V protecting the gate from voltage spikes.

Product Description

Infineon IPA029N06NXKSA1 is a N-Channel Power MOSFET in a TO-220 3-pin surface mount package designed for high efficiency power management and switching applications. It supports a maximum continuous drain current of 84 A and a drain-source voltage of 40 V, making it ideal for demanding industrial use.

This MOSFET offers excellent performance with a low drain-source resistance of 2.9 mΩ to reduce conduction losses and improve overall efficiency. It supports a maximum power dissipation of 81 W, enabling reliable operation under high load conditions and elevated temperatures from -55°C up to 175°C.

The device’s fast switching capability is facilitated by a typical gate charge of 80 nC at 8 V gate voltage, which helps optimize switching speed and reduce power dissipation in electronic circuits. Its maximum gate-source voltage rating of 20 V safeguards the transistor from excessive voltages at the gate terminal.

Applications include motor control systems, solar micro-inverters, fast switching DC-DC converters, and other industrial electronics requiring robust and efficient switching components. Through-hole mounting technology simplifies installation and repair while enabling strong mechanical support.

High continuous drain current rating of 84 A suitable for heavy loads. Maximum drain-source voltage of 40 V ensuring reliable operation in power circuits. TO-220 3-pin package compatible with surface mount technology. Maximum power dissipation of 81 W to handle high power applications.

Operating temperature range from -55°C to 175°C for industrial environments. Low drain-source resistance of 2.9 mΩ to minimize power losses. Typical gate charge of 80 nC enabling fast switching. Maximum gate-source voltage rating of ±20 V protecting the gate from voltage spikes.

Forward voltage drop of 1.2 V for efficient conduction. RoHS compliant ensuring environmental safety.

This product is optimized for multiple industrial applications such as industrial motor controllers, solar power systems, power supply units, and DC-DC converters. It is engineered to ensure system cost reduction, high power density, and reduced voltage overshoot for robust and scalable electronic designs.

Browse more semiconductor components and power MOSFETs at EnvMart to find compatible solutions for your electronics projects and industrial deployments.

Infineon N-Channel Power MOSFET, 84 A Drain Current, 40 V Drain Source Voltage, TO-220 3-Pin Surface Mount IPA029N06NXKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 84 A, making it suitable for heavy load applications.

It has a maximum drain-source voltage rating of 40 V, ensuring reliable operation in power circuits.

This MOSFET comes in a TO-220 3-pin package, compatible with surface mount technology.

The operating temperature range is from -55°C to 175°C, suitable for industrial environments.

This model can handle a maximum power dissipation of 81 W, making it effective for high power applications.

The typical gate charge is 80 nC at a gate-source voltage of 8 V, which facilitates fast switching.

The maximum gate-source voltage rating is ±20 V, which protects the gate from voltage spikes.

It features a low drain-source resistance of 2.9 mΩ, which helps minimize power losses.

This MOSFET is optimized for applications such as motor control systems, solar micro-inverters, and fast switching DC-DC converters.

The forward voltage drop is 1.2 V, which contributes to efficient conduction.

Yes, it is RoHS compliant, ensuring environmental safety in its usage.

The country of origin for this MOSFET is India.

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