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Infineon N-Channel MOSFET Dual OptiMOS 5, 50 A, 25 V, 8-Pin TISON-8 Surface Mount BSG0810NDIATMA1

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Infineon N-Channel MOSFET Dual OptiMOS 5, 50 A, 25 V, 8-Pin TISON-8 Surface Mount BSG0810NDIATMA1

Name: Infineon N-Channel MOSFET Dual OptiMOS 5, 50 A, 25 V, 8-Pin TISON-8 Surface Mount BSG0810NDIATMA1
Brand: Infineon
SKU: 178333
Price: 4.81 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	BSG0810NDIATMA1
Mount Type	Surface Mount
Series	BSG0810NDI
Maximum Operating Temperature	150°C
Package Type	TISON-8
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS, IEC61249-2-21, JEDEC1
Pin Count	8
Number of Elements per Chip	2
Channel Type	N
Maximum Continuous Drain Current Id	50A
Maximum Drain Source Voltage Vds	25V
Maximum Power Dissipation Pd	6.25W
Typical Gate Charge Qg @ Vgs	8.4nC
Maximum Gate Source Voltage Vgs	16V
Forward Voltage Vf	1V

Key Features

This MOSFET features a monolithic integrated Schottky-like diode for enhanced efficiency.
It has an 8-pin TISON-8 package suitable for compact PCB layouts.
The device supports a maximum gate-source voltage of 16 V and a typical gate charge of 8.4 nC.
Capable of dissipating up to 6.25 W of power with operating temperatures from -55°C to 150°C.
RoHS compliant with halogen-free lead plating, ensuring environmental safety.
Manufactured to meet IEC61249-2-21 and JEDEC standards for reliability and compliance.
Contains two elements per chip optimizing performance for power management applications.
Ideal for industrial, power electronics, and automotive applications requiring high-efficiency switching.

Product Description

Infineon BSG0810NDIATMA1 is a new dual asymmetric N-channel OptiMOS 5 MOSFET designed for efficient power switching with a maximum continuous drain current of 50 A and a maximum drain-source voltage of 25 V. Packaged in an 8-pin TISON-8 surface mount form factor, this device integrates a monolithic Schottky-like diode to reduce switching losses and improve overall efficiency.

The MOSFET features a typical gate charge of 8.4 nC at Vgs, enabling fast switching capabilities and optimized gate control. It supports a maximum gate-source voltage of 16 V and a maximum power dissipation of 6.25 W, making it suitable for demanding industrial and electronic power management applications.

With operating temperature ranges from -55°C to 150°C, the device withstands harsh environments and meets stringent industry standards including RoHS, IEC61249-2-21, and JEDEC certifications. The halogen-free, lead-free plated packaging ensures compliance with environmental regulations.

The dual-element chip design enhances performance in circuits requiring precise power control. This MOSFET is ideal for use in industrial power supplies, motor control, automotive electronics, and other applications that demand reliable high-current switching components.

Monolithic integrated Schottky-like diode for efficiency. Compact 8-pin TISON-8 surface mount package. Maximum 50 A continuous drain current rating. Maximum drain-source voltage of 25 V. Typical gate charge of 8.4 nC and gate-source voltage limit of 16 V.

Power dissipation rating of 6.25 W. Wide operating temperature range from -55°C to 150°C. RoHS and IEC61249-2-21 compliant, halogen-free packaging.

This Infineon MOSFET is suitable for industrial, laboratory, construction, HVAC, manufacturing, power supply, automotive, and other commercial electronics sectors. Explore more innovative semiconductor devices and power management solutions on EnvMart.