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Infineon IPL N-Channel MOSFET, 9.4 A Continuous Drain Current, 700 V Drain Source Voltage, 5-Pin ThinPAK IPLK70R1K2P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 6.35mm |
| Model | IPLK70R1K2P7ATMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 25.5W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 3V |
| Forward Voltage Vf | 900mV |
Key Features
- The ThinPAK 5x6 package offers a very small 5x6 mm footprint and a low profile of 1 mm height.
- Features exceptionally low parasitic capacitances to boost power density.
- Optimized for flyback topologies in power electronics applications.
- Includes an integrated ESD protection diode to improve reliability.
- Operates efficiently with low switching losses enhancing thermal performance.
- Compliant with JEDEC standards and AEC-Q101 automotive qualification.
- Surface-mount design with 5 pins for compact PCB integration.
- Wide operating temperature range from -55°C to 150°C.
Product Description
Infineon IPLK70R1K2P7ATMA1 is a high-performance N-Channel MOSFET designed for advanced power electronics with a continuous drain current rating of 9.4 A and a maximum drain-source voltage of 700 V. The device uses a ThinPAK 5x6 surface-mount package, which is characterized by a compact 5 mm by 6 mm footprint and a low profile height of 1 mm, ideal for space-constrained applications.
This MOSFET belongs to the 700 V CoolMOS™ P7 family optimized for flyback topologies offering extremely low switching losses and excellent thermal behavior. The device integrates an ESD protection diode and demonstrates low electromagnetic interference, contributing to robust system design.
Its maximum drain-source resistance of 1.2 mΩ and forward voltage of 900 mV make it highly efficient and suitable for a variety of industrial, automotive, and commercial uses including power supplies, motor drives, and switching regulators.
The MOSFET complies with JEDEC standards for industrial applications and the automotive AEC-Q101 qualification, ensuring reliable performance in harsh conditions. It operates over a wide temperature range from -55°C to 150°C and offers a maximum power dissipation of 25.5 W.
Its surface-mount ThinPAK package facilitates easy PCB assembly with a 5-pin configuration optimized for space-saving layout designs. RoHS compliance makes this device environmentally friendly.
The ThinPAK 5x6 package provides a compact form factor and low profile. Low parasitic capacitances enhance power density and switching performance. Integrated ESD protection diode safeguards device integrity under electrostatic stress.
Excellent thermal management ensures device longevity during operation. Designed specifically for industrial and automotive power applications. Meets JEDEC and AEC-Q101 standards for rigorous quality and reliability. Wide operating temperature range supports diverse environmental conditions.
Surface-mount 5-pin design allows efficient PCB layout in compact systems. RoHS compliant material selection aligns with environmental regulations.
This Infineon IPLN-Channel MOSFET is a fitting component for demanding power switching tasks in manufacturing, automotive electronics, industrial automation, and power supply circuits. Explore similar high-quality semiconductor components on EnvMart for all your industrial and engineering needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.4 A.
It can handle a maximum drain-source voltage of 700 V.
This model uses a ThinPAK 5x6 package type.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation is 25.5 W.
The maximum drain-source resistance is 1.2 mΩ.
Yes, it includes an integrated ESD protection diode to improve reliability.
The typical gate charge is 80 nC at Vgs.
It complies with the AEC-Q101 automotive standard.
Yes, the device is RoHS compliant, aligning with environmental regulations.
The ThinPAK 5x6 package has a pin count of 5.
This MOSFET belongs to the IPL series.
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