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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE065N10NM5CGATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.85mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 730mV |
Infineon IQE065N10NM5CGATMA1 is a high-performance N-Channel MOSFET designed for demanding applications requiring high drain current and low on-resistance. It operates at a maximum drain source voltage of 30 V and can handle continuous drain currents up to 253 A, making it suitable for power switching and amplification tasks in industrial, automotive, and consumer electronics sectors.
This device comes in an 8-pin PQFN package with a compact 3.3 mm length, optimized for surface-mount technology, enabling efficient PCB layout and enhanced thermal management. Its low maximum drain source resistance of 0.85 milliohms ensures minimal conduction losses, enhancing system efficiency.
The MOSFET has a maximum power dissipation rating of 81 W and typical gate charge of 80 nC, supporting high switching speeds and demanding power density applications. It operates reliably over a temperature range from -55°C to 150°C and meets the stringent automotive standard AEC-Q101, assuring quality and durability in automotive environments.
This robust MOSFET is particularly suited for use in industrial power control systems, automotive electronics, power converters, and energy management solutions where high power handling, efficiency, and reliability are paramount.
Maximum continuous drain current of 253 A enables heavy load handling. Low Rds(on) of 0.85 mΩ reduces conduction losses and heat generation. High maximum power dissipation of 81 W supports demanding applications. Wide operating temperature range (-55°C to 150°C) ensures reliability in diverse environments.
Compliant with RoHS and automotive AEC-Q101 standards for quality assurance. Compact PQFN package facilitates high-density PCB designs and improved thermal performance. Forward voltage of 730 mV optimizes power efficiency during conduction.
Choose Infineon MOSFETs for superior power management in electronics manufacturing, automotive applications, industrial automation, and energy-efficient device designs. Explore more semiconductor components in the EnvMart Electronics & Electricals category.
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