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Infineon IQE N-Channel MOSFET, 253 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin PQFN IQE065N10NM5CGATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Length 3.3mm
Model IQE065N10NM5CGATMA1
Mount Type Surface
Series IQE
Maximum Operating Temperature 150°C
Package Type PQFN
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 253A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 0.85mΩ
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 16V
Forward Voltage Vf 730mV

Key Features

  • Features a maximum drain source resistance of 0.85 milliohms for efficient conduction.
  • Typical gate charge is 80 nanocoulombs at the gate-source voltage.
  • Maximum power dissipation is rated at 81 watts for robust performance.
  • Operating temperature ranges from -55°C to 150°C for wide environmental tolerance.
  • Includes automotive standard AEC-Q101 certification ensuring high reliability.
  • Compact 3.3 mm length PQFN package supports surface mount assembly.
  • Maximum gate-source voltage is 16 V for enhanced gate control.
  • Forward voltage of 730 millivolts promotes low power loss during conduction.

Product Description

Infineon IQE065N10NM5CGATMA1 is a high-performance N-Channel MOSFET designed for demanding applications requiring high drain current and low on-resistance. It operates at a maximum drain source voltage of 30 V and can handle continuous drain currents up to 253 A, making it suitable for power switching and amplification tasks in industrial, automotive, and consumer electronics sectors.

This device comes in an 8-pin PQFN package with a compact 3.3 mm length, optimized for surface-mount technology, enabling efficient PCB layout and enhanced thermal management. Its low maximum drain source resistance of 0.85 milliohms ensures minimal conduction losses, enhancing system efficiency.

The MOSFET has a maximum power dissipation rating of 81 W and typical gate charge of 80 nC, supporting high switching speeds and demanding power density applications. It operates reliably over a temperature range from -55°C to 150°C and meets the stringent automotive standard AEC-Q101, assuring quality and durability in automotive environments.

This robust MOSFET is particularly suited for use in industrial power control systems, automotive electronics, power converters, and energy management solutions where high power handling, efficiency, and reliability are paramount.

Maximum continuous drain current of 253 A enables heavy load handling. Low Rds(on) of 0.85 mΩ reduces conduction losses and heat generation. High maximum power dissipation of 81 W supports demanding applications. Wide operating temperature range (-55°C to 150°C) ensures reliability in diverse environments.

Compliant with RoHS and automotive AEC-Q101 standards for quality assurance. Compact PQFN package facilitates high-density PCB designs and improved thermal performance. Forward voltage of 730 mV optimizes power efficiency during conduction.

Choose Infineon MOSFETs for superior power management in electronics manufacturing, automotive applications, industrial automation, and energy-efficient device designs. Explore more semiconductor components in the EnvMart Electronics & Electricals category.

Infineon IQE N-Channel MOSFET, 253 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin PQFN IQE065N10NM5CGATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 253 A, allowing it to handle heavy loads effectively.

This MOSFET operates at a maximum drain source voltage of 30 V, suitable for various applications.

It comes in an 8-pin PQFN package, which is optimized for surface mount technology.

The operating temperature range is from -55°C to 150°C, ensuring reliability in diverse environments.

The maximum power dissipation rating for this MOSFET is 81 W, supporting demanding applications.

The maximum gate-source voltage is 16 V, allowing for enhanced gate control.

The typical gate charge is 80 nanocoulombs at the gate-source voltage, facilitating high switching speeds.

The maximum drain source resistance is 0.85 milliohms, which helps minimize conduction losses.

It complies with the automotive standard AEC-Q101, ensuring high reliability in automotive applications.

The forward voltage is 730 millivolts, promoting low power loss during conduction.

This model has a length of 3.3 mm, making it compact for high-density PCB designs.

This MOSFET is compliant with RoHS standards, ensuring it meets environmental regulations.

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