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Nexperia N-Channel Enhancement MOSFET 10.3 A Drain Current 25 V Vds, Surface Mount MLPAK33 8-Pin PXN6R2-25QLJ

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Nexperia N-Channel Enhancement MOSFET 10.3 A Drain Current 25 V Vds, Surface Mount MLPAK33 8-Pin PXN6R2-25QLJ

Name: Nexperia N-Channel Enhancement MOSFET 10.3 A Drain Current 25 V Vds, Surface Mount MLPAK33 8-Pin PXN6R2-25QLJ
Brand: Nexperia
SKU: 177169
Price: 0.47 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	PXN6R2-25QLJ
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	MLPAK33
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	10.3A
Maximum Drain Source Voltage Vds	25V
Maximum Drain Source Resistance Rds	13.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	12.5W
Maximum Gate Source Voltage Vgs	20V

Key Features

Enhancement mode with N-channel for efficient switching applications.
Maximum continuous drain current of 10.3 amperes providing high power capacity.
25 V maximum drain to source voltage ensuring reliable operation.
Surface-mount MLPAK33 package with compact 3.3 x 3.3 mm footprint.
Low drain-source resistance of 13.6 milliohms for minimal conduction loss.
Supports a maximum power dissipation up to 12.5 watts.
Operates across a temperature range from -55°C to 150°C.
Maximum gate-source voltage rating of 20 volts.

Product Description

The Nexperia PXN6R2-25QLJ is an N-channel enhancement-mode MOSFET designed for power switching applications requiring high efficiency and reliability. Featuring a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 25 V, this MOSFET is housed in a compact MLPAK33 8-pin surface mount package (3.3 x 3.3 mm footprint) suitable for modern PCB layouts.

Constructed using advanced trench MOSFET technology, the device offers ultra-low gate charges (QG and QGD), which significantly improve switching efficiency especially at higher frequencies. Its low drain-source resistance (13.6 mΩ) ensures minimal conduction losses, promoting better energy efficiency and thermal performance.

With a maximum power dissipation rating of 12.5 W, it is suitable for medium power applications. The device supports a wide operating temperature range from -55°C up to 150°C, making it reliable for industrial, automotive (non-qualified), electronic, and power management use cases.

The PXN6R2-25QLJ supports a maximum gate-source voltage of 20 V, allowing robust gate drive compatibility. The soft recovery and low electromagnetic interference (EMI) characteristics reduce spiking and ringing phenomena, aiding in sensitive electronics and signal integrity maintenance.

It is ideal for use in industrial power supplies, motor control, battery management systems, lighting controls, and other electronic systems requiring efficient and compact N-channel MOSFET switches.

Enhancement mode with N-channel for efficient switching applications. Maximum continuous drain current of 10.3 amperes providing high power capacity. 25 V maximum drain to source voltage ensuring reliable operation. Surface-mount MLPAK33 package with compact 3.3 x 3.3 mm footprint.

Low drain-source resistance of 13.6 milliohms for minimal conduction loss. Supports a maximum power dissipation up to 12.5 watts. Operates across a temperature range from -55°C to 150°C. Maximum gate-source voltage rating of 20 volts.

Trench MOSFET technology ensures ultra-low gate charges for enhanced efficiency. Soft recovery and low EMI design reduces spiking and ringing during switching. Explore more Nexperia MOSFETs and electronic components at EnvMart for your industrial and commercial projects.