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Nexperia N-Channel Enhancement MOSFET 12.7 A 30 V 8-Pin MLPAK33 PXN6R7-30QLJ

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PXN6R7-30QLJ
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type MLPAK33
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 12.7A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 13.6mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 12.5W
Maximum Gate Source Voltage Vgs 20V

Key Features

  • The device features an enhancement mode channel for efficient switching performance.
  • It has a maximum drain-source resistance of 13.6 milliohms to minimize power loss.
  • Support for maximum gate-source voltage of 20 volts ensures robust gate driving.
  • Designed for reliable operation between -55°C and 150°C operating temperatures.
  • Utilizes trench MOSFET technology to achieve ultra-low gate charge for high system efficiency.
  • Provides superfast switching with soft-recovery, reducing electromagnetic interference.
  • The MLPAK33 package has a small 3.3 mm by 3.3 mm footprint suitable for high-density PCBs.
  • Surface mount mounting type supports modern PCB assembly processes.

Product Description

Nexperia PXN6R7-30QLJ is a high-performance N-Channel enhancement mode MOSFET designed with trench technology, housed in a compact MLPAK33 8-pin surface mount package. Rated for continuous drain currents of 12.7 A and maximum drain-source voltage of 30 V, this device is well suited for efficient switching applications in electronic and power circuits.

This MOSFET features ultra-low gate charges (QG and QGD) which significantly reduce switching losses, making it ideal for high-frequency operation scenarios. The device supports a maximum gate-source voltage of 20 V and maintains stable operation across a wide temperature range from -55°C to 150°C.

The MLPAK33 package size of 3.3 x 3.3 mm offers a small form factor, while the device’s low drain-source resistance of 13.6 mΩ ensures minimal conduction loss. Its superfast switching capabilities with soft recovery characteristics reduce spiking and ringing, minimizing electromagnetic interference (EMI) in demanding applications.

This MOSFET is suitable for various industrial, electronics, automotive, and power management circuits where compact size, high efficiency, and reliability are critical. The surface mount package supports automated PCB assembly, facilitating modern manufacturing processes.

The device features an enhancement mode channel for efficient switching performance. It has a maximum drain-source resistance of 13.6 milliohms to minimize power loss. Support for maximum gate-source voltage of 20 volts ensures robust gate driving.

Designed for reliable operation between -55°C and 150°C operating temperatures. Utilizes trench MOSFET technology to achieve ultra-low gate charge for high system efficiency. Provides superfast switching with soft-recovery, reducing electromagnetic interference.

The MLPAK33 package has a small 3.3 mm by 3.3 mm footprint suitable for high-density PCBs. Surface mount mounting type supports modern PCB assembly processes. Pin count of 8 pins offers reliable connections for electronic circuitry.

Explore the broad portfolio of Nexperia MOSFETs and other semiconductor components on EnvMart for advanced industrial, automotive, and electronic manufacturing solutions.

Nexperia N-Channel Enhancement MOSFET 12.7 A 30 V 8-Pin MLPAK33 PXN6R7-30QLJ
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