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Nexperia N-Channel Enhancement MOSFET, 14 A, 30 V, 8-Pin MLPAK33 PXN5R4-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN5R4-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This MOSFET employs enhancement mode to provide reliable switching performance.
- It supports a maximum continuous drain current of 14 A, suitable for medium power applications.
- The maximum drain-source voltage rating is 30 V, allowing for moderate voltage usage.
- The package type is MLPAK33, ensuring a 3.3 x 3.3 mm footprint for compact surface mounting.
- The maximum drain-source resistance (Rds) is 13.6 milliohms which ensures low conduction losses.
- Operates within a wide temperature range from -55°C to 150°C for various industrial environments.
- The maximum power dissipation is rated at 12.5 W to manage thermal performance effectively.
- Maximum gate-source voltage is 20 V to safeguard gate integrity during operation.
Product Description
The Nexperia PXN5R4-30QLJ is an N-channel enhancement mode MOSFET designed for use in electronic and power semiconductor applications. Packaged in the compact MLPAK33 surface-mount device with an 8-pin configuration, it offers high efficiency and reliability for power switching needs.
This MOSFET supports a maximum continuous drain current of 14 A at a drain-source voltage of 30 V, making it suitable for medium power applications in consumer electronics, industrial electronics, and embedded systems. Its trench MOSFET technology enables low drain-source resistance of 13.6 mΩ, reducing power losses and improving thermal management.
The device can safely operate in harsh temperature environments ranging from -55°C to 150°C, ensuring its suitability in industrial and automotive applications not requiring specific automotive certifications. The maximum power dissipation capacity of 12.5 W allows the device to handle considerable switching loads without rapid overheating.
The MOSFET is logic-level compatible with a maximum gate-source voltage of 20 V. Its small footprint MLPAK33 package (3.3 x 3.3 mm) allows compact PCB layouts on surface-mount assembly lines.
Applications include power management circuits, switching regulators, load drivers, and amplification circuits in various electronic projects and commercial products. Enhancement mode N-channel MOSFET with 14 A continuous drain current.
Maximum drain-source voltage of 30 V for moderate voltage circuits. MLPAK33 compact surface mount package with 8 pins for easy PCB integration. Low on-resistance of 13.6 mΩ reduces conduction losses and heat generation. Operating temperature range from -55°C to 150°C fits industrial environments.
Power dissipation up to 12.5 W for efficient thermal handling. Maximum gate-source voltage of 20 V ensures protection of the gate. Explore a wide range of MOSFETs and other discrete semiconductors at EnvMart for your industrial, electronics manufacturing, and engineering needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 A, making it suitable for medium power applications.
This MOSFET has a maximum drain-source voltage rating of 30 V, which allows for moderate voltage usage in various applications.
The package type of this model is MLPAK33, which ensures a compact footprint of 3.3 x 3.3 mm for surface mounting.
The maximum power dissipation capacity of this MOSFET is rated at 12.5 W, allowing it to handle considerable switching loads effectively.
The maximum gate-source voltage for this MOSFET is 20 V, which helps to safeguard the gate during operation.
This model operates within a wide temperature range from -55°C to 150°C, making it suitable for various industrial environments.
The maximum drain-source resistance (Rds) is 13.6 milliohms, which helps reduce conduction losses.
The MLPAK33 package of this MOSFET features 8 pins for easy integration into PCB layouts.
This model features an N-channel configuration, which is common for enhancement mode MOSFETs.
This MOSFET is suitable for applications such as power management circuits, switching regulators, load drivers, and amplification circuits in electronics.
The PXN5R4-30QLJ is designed for surface mounting, facilitating compact PCB layouts.
The country of origin for this model is India.
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