Nexperia Dual Logic Level N-Channel MOSFET, 42 A, 40 V, 8-Pin LFPAK56D Surface Mount BUK9V13-40HX

Nexperia BUK9V13-40HX is a dual logic level N-channel MOSFET designed for high efficiency and surface mount applications. The device supports a maximum continuous drain current of 42 A and can withstand a maximum drain-source voltage of 40 V. Packaged in an LFPAK56D 8-pin surface mount configuration, this MOSFET is suitable for modern power electronics and motor control circuits.

Constructed using Trench 9 MOS technology, the device features low power losses and high power density, which makes it particularly advantageous in compact industrial designs. The package's optimized thermal characteristics reduce parasitic inductance, thereby improving overall system efficiency.

This MOSFET has superior avalanche performance with repetitive avalanche rating capabilities. Operating reliably within a wide temperature range from -55°C to 175°C, it is designed and qualified to the AEC-Q101 automotive standard. The dual element per chip half-bridge configuration reduces PCB complexity and footprint, ideal for 3-phase motor drives and other power switching applications.

The product complies with RoHS standards ensuring environmental compliance, making it suitable for applications in industrial automation, power supplies, and electronic manufacturing.

Surface mount LFPAK56D package with half-bridge configuration. Maximum continuous drain current of 42 A and maximum drain-source voltage of 40 V. Low on-resistance of 13.6 milliohms reduces conduction losses. Maximum power dissipation of 46 watts supports high power applications.

Wide operating temperature range from -55°C to 175°C. Advanced Trench 9 MOS technology for high power density and low losses. Complies with RoHS directive for environmental safety. Ideal for automotive, industrial, and power management applications.

Explore the range of Nexperia semiconductor products for high-quality, reliable performance in power electronics and semiconductor solutions on EnvMart.