World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Shopping Cart $0.00

Microchip VP2206 Type P-Channel MOSFET, -640 mA, -60 V, Enhancement Mode, 3-Pin TO-92 VP2206N3-G

Free Delivery in India | Lowest Global Shipping Charges

Microchip VP2206 Type P-Channel MOSFET, -640 mA, -60 V, Enhancement Mode, 3-Pin TO-92 VP2206N3-G

Name: Microchip VP2206 Type P-Channel MOSFET, -640 mA, -60 V, Enhancement Mode, 3-Pin TO-92 VP2206N3-G
Brand: Microchip
SKU: 176766
Price: 3.02 USD
Availability: InStock



Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin	India
Brand	Microchip
Model	VP2206N3-G
Mount Type	Through Hole
Series	VP2206
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	-640mA
Maximum Drain Source Voltage Vds	-60V
Maximum Drain Source Resistance Rds	0.9Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	0.74W
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.8V

Key Features

This MOSFET has a maximum continuous drain current of -640 mA.
It supports a maximum drain-source voltage of -60 V.
The device operates in enhancement mode and features a low on-resistance of 0.9Ω.
The package type is TO-92 designed for through-hole mounting.
Its power dissipation is 0.74 W enabling medium power handling.
Operational temperature ranges from -55°C to a high maximum of 150°C.
The maximum gate-source voltage rating is 30 V.
Its forward voltage is 1.8 V.

Product Description

Microchip VP2206N3-G Type P-Channel MOSFET is an enhancement-mode transistor designed for reliable switching and amplifying in various electronic and industrial applications. Packaged in a compact 3-pin TO-92 housing, it allows for easy through-hole mounting on printed circuit boards.

Utilizing a vertical DMOS structure combined with silicon-gate manufacturing technology, this device achieves high input impedance, excellent thermal stability, and low threshold voltage. The device's features prevent thermal runaway and secondary breakdown, making it robust for use in demanding industrial electronics and control systems.

Its electrical characteristics include a maximum continuous drain current of -640 mA and a maximum drain-source voltage of -60 V, suitable for medium power applications. The 0.9Ω maximum drain-source resistance ensures efficient conduction while maintaining low power loss. The transistor supports a gate-source voltage of up to 30 V and operates efficiently within a temperature range of -55°C to 150°C.

The MOSFET includes an integral source-to-drain diode, enhancing its switching performance in circuits involving inductive loads. This makes the VP2206N3-G ideal for use in power management, motor control, signal amplification, and other semiconductor-based electronic systems.

Designed for industrial, consumer electronics, and laboratory equipment, this MOSFET delivers fast switching speed and low input capacitance. Its positive temperature coefficient allows easy paralleling of devices for increased current capacity.

This product is designed for reliable performance in industrial and commercial electronic circuits. Suitable for enhancing switching efficiency and amplification in control and power circuits. Its through-hole TO-92 package ensures compatibility with standard PCBs.

Offers excellent thermal stability and protection against breakdown. Integral diode and vertical DMOS structure provide superior switching characteristics. Explore similar MOSFETs and semiconductor devices in the Electronics & Electricals category on EnvMart to enhance your electronic projects and product designs.