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STMicroelectronics STP N-Channel MOSFET, Enhancement Mode, 3-Pin TO-220, 55 A, 650 V, 140 W STP80N240K6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 28.9mm |
| Model | STP80N240K6 |
| Width | 10.4mm |
| Mount Type | Through Hole |
| Series | STP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- This enhancement mode MOSFET features ultra low gate charge for high efficiency.
- It is designed with MDmesh K6 super junction technology for best-in-class on-resistance per area.
- Rated maximum power dissipation is 140 W for reliable operation.
- Typical gate charge of 80 nC minimizes switching losses.
- Maximum drain-source resistance at 45 mΩ ensures reduced conduction losses.
- Operates reliably at temperatures from -55°C up to 150°C.
- Features a 3-pin through-hole mount TO-220 package for easy PCB integration.
- Meets automotive grade AEC-Q101 standard and UL approvals for quality assurance.
Product Description
STMicroelectronics STP80N240K6 N-Channel MOSFET is an advanced power semiconductor device engineered using MDmesh K6 technology, offering superior power density and efficiency. With a maximum continuous drain current of 55 A and drain-source voltage of 650 V, this enhancement mode MOSFET is suited for high voltage, high current industrial and commercial electronics.
The device comes in a through-hole 3-pin TO-220 package, facilitating robust heat dissipation and mechanical stability. It sustains a maximum power dissipation of 140 W, enabling it to handle demanding power conversion tasks effectively. The typical gate charge of 80 nC contributes to reducing switching losses, optimizing system performance.
The MOSFET features a maximum drain-source resistance of 45 milliohms and can operate within a temperature range from -55°C to 150°C. It is zener-protected and 100% avalanche tested, ensuring high reliability and safety across applications.
This component complies with automotive AEC-Q101 standards and UL certifications, affirming its suitability for automotive and industrial use cases. Typical applications include flyback converters, LED lighting systems, chargers, and various power adapter circuits where efficiency and space savings are critical.
This MOSFET employs ultra low gate charge for optimized switching performance. It provides best-in-class on-resistance per area due to MDmesh super junction structure. The device is avalanche tested ensuring ruggedness under transient conditions.
Manufactured to meet stringent automotive and industrial standards. The TO-220 package offers easy mounting and excellent thermal management. Designed for flyback topology power supplies, LED lighting, and adapter circuits.
3-pin configuration supports simple, reliable connection to circuits. Supports high voltage operation at 650 V maximum drain-source voltage. Contributes to lowering total BOM cost and board space requirements.
Explore the comprehensive range of STMicroelectronics MOSFETs for efficient power management in industrial, automotive, and commercial electrical equipment. Discover more premium semiconductor components in the Semiconductor category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
It has a maximum drain-source voltage of 650 V.
The typical gate charge is 80 nC, which helps minimize switching losses.
The maximum power dissipation is rated at 140 W, allowing for reliable operation in demanding applications.
The dimensions are 28.9 mm in length, 10.4 mm in width, and 4.6 mm in height.
The maximum drain-source resistance is 45 mΩ, which reduces conduction losses.
It operates reliably within a temperature range from -55°C to 150°C.
This model complies with the AEC-Q101 automotive standard.
It features a through-hole mount type for easy PCB integration.
Typical applications include flyback converters, LED lighting systems, and various power adapter circuits.
It is zener-protected and 100% avalanche tested, ensuring high reliability across applications.
The maximum gate-source voltage is 30 V.
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