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ams OSRAM Infrared Photodiode Surface Mount Radial Package 70μA Short Circuit Current 0.005μs Fall Time SFH 2505 FA

Category Photodiode Brand ams OSRAM Condition New

Specifications

Country of Origin Malaysia
Brand ams OSRAM
Model SFH 2505 FA
Mount Type Surface
Series SFH 2505 FA
Short Circuit Current 70μA
Maximum Operating Temperature 85°C
Package Type SMR
Minimum Operating Temperature -40°C
Dark Current 1nA
Open Circuit Voltage 390mV
Number of Pins 2
Typical Fall Time 0.005μs
Wavelength of Peak Sensitivity 900nm
Spectrums Detected Infrared
Minimum Wavelength Detected 750nm
Maximum Wavelength Detected 1100nm

Key Features

  • Operates in the infrared spectrum with peak sensitivity at 900nm.
  • Features a quick switching time with typical fall time of 0.005 microseconds.
  • Designed with a surface mount SMR radial package and 2 pins for easy integration.
  • Functions within a temperature range of -40°C to 85°C for industrial reliability.
  • Exhibits a short circuit current of 70 microamperes and a low dark current of 1 nanoampere.
  • Open circuit voltage rated at 390 millivolts ensuring effective signal generation.
  • ESD protection up to 2 kV according to ANSI/ESDA/JEDEC JS-001 standards.
  • Suitable for use in electronic equipment, industrial automation, and smoke detectors.

Product Description

ams OSRAM SFH 2505 FA is a high-performance infrared photodiode designed for surface mounting in a radial SMR package. This silicon PIN photodiode offers outstanding sensitivity to infrared wavelengths with peak sensitivity at 900nm and an operating wavelength range from 750nm to 1100nm. Its fast switching capability, including a typical rise and fall time of 0.005 microseconds, supports precise and rapid detection in electronic and industrial applications.

The device features a low dark current of 1nA and a short circuit current of 70μA, ensuring high signal integrity and low noise. Its open circuit voltage is rated at 390mV, suitable for effective photonic to electrical signal conversion. It withstands operating temperatures from -40°C to 85°C, making it reliable for various environmental conditions.

Its surface mount radial package facilitates easy PCB integration while maintaining mechanical stability. The SFH 2505 FA series complies with stringent ESD protection standards (2 kV per ANSI/ESDA/JEDEC JS-001 HBM Class 2), safeguarding the device against typical handling static discharge.

This photodiode is versatile and can be used in electronic devices, high bay industrial applications, industrial automation systems, smoke detectors, and white goods. Its packaging of black epoxy enhances durability and enhances performance stability over time.

Manufactured in Malaysia, the SFH 2505 FA guarantees quality consistent with ams OSRAM's standards. It is frequently matched with LED emitters such as SFH 4543 or SFH 4558 for complementary infrared sensing solutions.

Operates in the infrared spectrum with peak sensitivity at 900nm. Provides quick switching times for precise signal detection. Low dark current minimizes noise interference. Robust surface mount package for reliable integration.

Withstands a wide temperature range for industrial use. Enhanced ESD protection protects the photodiode from static shocks. Suitable for multiple industrial and consumer electronics applications. Manufactured under strict quality standards in Malaysia.

Explore the full range of Photodiodes and optoelectronic components on EnvMart for reliable and high-quality solutions.

ams OSRAM Infrared Photodiode Surface Mount Radial Package 70μA Short Circuit Current 0.005μs Fall Time SFH 2505 FA
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Frequently Asked Questions

The peak sensitivity wavelength of this photodiode is 900nm, operating effectively within the infrared spectrum.

This model operates within a temperature range of -40°C to 85°C, making it suitable for various industrial environments.

The short circuit current of this photodiode is 70 microamperes (μA), ensuring effective signal generation.

It features a typical fall time of 0.005 microseconds, supporting quick switching for precise detection.

The dark current of this model is 1 nanoampere (nA), which helps minimize noise interference.

The open circuit voltage is rated at 390 millivolts (mV), suitable for effective photonic to electrical signal conversion.

This model is designed with 2 pins for easy integration into electronic circuits.

It comes in a surface mount SMR package, facilitating reliable PCB integration.

This photodiode can detect wavelengths from 750nm to 1100nm, covering a broad range of infrared applications.

It offers ESD protection up to 2 kV according to ANSI/ESDA/JEDEC JS-001 standards, safeguarding against static discharge.

This photodiode is suitable for use in electronic equipment, industrial automation, smoke detectors, and other consumer electronics.

It is manufactured in Malaysia, ensuring quality consistent with ams OSRAM's standards.

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