World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 0.5 W Power, 3-Pin SOT-23 BSS126IXTSA1

Free Delivery in India | Lowest Global Shipping Charges

Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 0.5 W Power, 3-Pin SOT-23 BSS126IXTSA1

Name: Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 0.5 W Power, 3-Pin SOT-23 BSS126IXTSA1
Brand: Infineon
SKU: 174577
Price: 0.11 USD
Availability: InStock



Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.1mm
Length	3mm
Model	BSS126IXTSA1
Width	1.4mm
Mount Type	Surface
Series	SIPMOS®
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	21mA
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	700Ω
Channel Mode	Depletion
Maximum Power Dissipation Pd	0.5W
Typical Gate Charge Qg @ Vgs	1.4nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Designed for surface mount applications in a compact 3-pin SOT-23 package.
Operates in depletion mode providing normally-on behavior for simplified gate control.
Maximum power dissipation of 0.5 W suits low-power thermal budgets.
Maximum drain-source resistance of 700 Ω limits conduction losses.
Wide operating temperature range from -55°C to 150°C for varied environments.
Typical gate charge of 1.4 nC allows modest gate-drive energy requirements.
Maximum gate-to-source voltage of 20 V supports safe operation.
Forward voltage of 1.2 V reduces voltage drop in driven paths.

Product Description

Infineon BSS126IXTSA1 is a high-voltage SIPMOS® N-Channel MOSFET designed for small-signal, low-current applications requiring depletion-mode operation. It supports up to 600 V maximum drain-source voltage and features a maximum continuous drain current of 21 mA. Packaged in a compact 3-pin SOT-23 surface-mount housing, this MOSFET suits automated PCB assembly in power and signal management circuits.

The depletion-mode operation provides normally-on behavior which simplifies gate drive circuitry in analog and switching applications. Its maximum drain-source resistance of 700 Ω ensures limited on-state conduction losses, while the typical forward voltage of 1.2 V minimizes voltage drops in the conduction path. The device also benefits from a low typical gate charge of 1.4 nC allowing efficient switching at low gate power.

Operating reliably over a wide temperature range from -55 °C to 150 °C, the BSS126IXTSA1 is suited for demanding industrial, laboratory, and commercial electronics environments. The maximum gate-to-source voltage rating of 20 V guarantees safe electrical operation under typical bias conditions.

Typical applications include high voltage biasing networks in analog designs, low current protection circuits, bleeder resistors, sensor front-end current steering, and compact power management subcircuits within converters. Its small footprint and surface mount format idealize it for space-constrained PCB layouts requiring efficient power switching.

Designed for surface mount mounting in a 3-pin SOT-23 package. Depletion mode channel type provides normally-on operation. Maximum drain-source voltage rated at 600 V. Supports continuous drain current of 21 mA. Low on-resistance of 700 Ω minimizes conduction losses.

Typical gate charge of 1.4 nC supports efficient gate drive. Wide temperature tolerance from -55 °C to 150 °C. Maximum power dissipation is 0.5 W under rated conditions. Forward voltage approximately 1.2 V reduces voltage drop in conduction.

This SIPMOS® MOSFET series by Infineon is a reliable choice for high-voltage, low-current surface mount electronics, used extensively in industrial, laboratory, and power management applications. Explore more semiconductor components and MOSFETs in the Electronics & Electricals category on EnvMart.