Infineon CoolMOS N-Channel MOSFET 50 A 700 V 3-Pin TO-263 IPB65R041CFD7ATMA1

Infineon IPB65R041CFD7ATMA1 CoolMOS N-Channel MOSFET is engineered for high efficiency and reliability in demanding industrial applications. Featuring a maximum continuous drain current of 50 A and a maximum drain-source voltage of 700 V, this device is housed in a compact 3-Pin TO-263 surface mount package that supports easy integration into PCB designs.

This CoolMOS series MOSFET includes an integrated fast body diode making it particularly suitable for resonant high power topologies. It delivers excellent hard-commutation ruggedness and provides extra safety margins for designs requiring higher bus voltages. The product enhances power density and energy efficiency, addressing needs in servers, telecommunication infrastructure, solar energy systems, and electric vehicle charging stations.

The device’s low maximum drain-source resistance (41 mΩ) contributes to improved full-load efficiency, reducing energy losses and heat generation in power supply units. Its surface mount TO-263 package supports automated assembly processes and compact designs. While no specific automotive standards or certifications apply, it is manufactured to high industry benchmarks by Infineon.

Designed with CoolMOS technology for high power efficiency. Integrated fast body diode suitable for resonant high power topologies. Compact 3-Pin TO-263 surface mount package. Excellent ruggedness for hard-commutation environment.

Extra safety margin for high bus voltage designs. Enhanced power density for industrial SMPS usage. Superior light-load and full-load efficiency performance. Application in server, telecom, solar, and EV charging stations.

This MOSFET represents a reliable solution for industrial and commercial electronic power management systems requiring robust and efficient semiconductor switches. Explore more Infineon semiconductor solutions in the EnvMart catalog for industrial electronics and power components.